Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Thomas G. Tetreault"'
Autor:
C. Sung, L.P. Allen, William D. Goodhue, David Bliss, K. Krishnaswami, C. Santeufeimio, R. MacCrimmon, Thomas G. Tetreault, X. Li
Publikováno v:
Applied Surface Science. 218:251-258
In order to bring low-power epitaxy-based gallium antimonide (GaSb) electronics and electro-optics to market, high-quality GaSb substrates with smooth surfaces and no surface damage are required. Here, a novel final polishing technique, gas cluster i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca011269eb4313f83a3fbfe4e35ca999
https://doi.org/10.1016/s0169-4332(03)00681-0
https://doi.org/10.1016/s0169-4332(03)00681-0
Autor:
D. Bakken, C. Santeufemio, G. Dallas, M. Tabat, X. Li, Thomas G. Tetreault, Kevin S. Jones, C. Sung, William D. Goodhue, David Bliss, L. P. Allen
Publikováno v:
Journal of Electronic Materials. 32:842-848
Gas-cluster ion-beam (GCIB) processing of surfaces provides individual atoms within an accelerated gas cluster (∼1,500 atoms per cluster), an energy approximately equal to the individual bond energy of the target surface atoms. The gas-cluster beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0342ebf96c942c7e1b7872180ed76e7a
https://doi.org/10.1007/s11664-003-0198-8
https://doi.org/10.1007/s11664-003-0198-8
Autor:
Thomas G. Tetreault, A. Al-Jibouri, J. Hautala, J. I. Budnick, David B. Fenner, L. P. Allen, Kevin S. Jones
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1207-1212
The reduction of roughness, without introducing damage, of thin-film surfaces in giant magnetoresistance (GMR) applications will be essential in the development of advanced devices. Tools and methods to accomplish this are limited at present. Gas-clu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c200675489bee7a344a373d93a1c57a
https://doi.org/10.1116/1.1349193
https://doi.org/10.1116/1.1349193
Publikováno v:
Materials Science Forum. :71-110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb811366175612d1d937eccabf458ef
https://doi.org/10.4028/www.scientific.net/msf.54-55.71
https://doi.org/10.4028/www.scientific.net/msf.54-55.71
Publikováno v:
MRS Proceedings. 958
Materials processing with a gas cluster ion beam (GCIB) is an emerging technology that has been shown to produce novel material properties in the very near-surface (infusion. Its principal characteristic enables room temperature shallow processing wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54b1145b31bef549067b8b0270772d5
https://doi.org/10.1557/proc-0958-l10-07
https://doi.org/10.1557/proc-0958-l10-07
Autor:
Thomas G. Tetreault, Leonard C. Feldman, Vincent Difilippo, J. K. Hirvonen, David B. Fenner, Johnathan Bennett
Publikováno v:
SPIE Proceedings.
The surfaces of single-crystal wafers of sapphire and silicon carbide with microelectronic-grade high polish were exposed to a gas-cluster ion beam (GCIB) and significant reductions in roughness were observed. Atomic-force microscopy revealed that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e746fc59af9c1c5e925ffab9902165b2
https://doi.org/10.1117/12.452556
https://doi.org/10.1117/12.452556
Autor:
Mike Lioubtchenko, Matthew Schurmant, Qisheng Chen, H. Paul Maruska, Thomas G. Tetreault, Shiro Sakap, Robert Vaudo, Marek Osinskif, Randy J. Shult, Stephen J. Pearton
Publikováno v:
Scopus-Elsevier
With great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::940997c2ba96334c5baaeec3c6a4433f
https://doi.org/10.1557/proc-483-333
https://doi.org/10.1557/proc-483-333
Publikováno v:
MRS Proceedings. 279
Aluminum oxide films have been deposited by electron-beam evaporation on heated substrates under oxygen ion bombardment. Substrates were crystalline silicon, grafoil and glass. Both substrat temperature and ion current density were changed for each d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e983c2678ba926412e62c222e5ea7f0
https://doi.org/10.1557/proc-279-825
https://doi.org/10.1557/proc-279-825
Publikováno v:
Metallized Plastics 2 ISBN: 9781489907370
Significant improvements in the adhesion of several metals to polymers have been achieved through the ion beam assisted deposition (IBAD) technique. Films of silver, gold, and copper were deposited via IBAD onto poly(tetrafluoroethylene) (PTFE) subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e2f292e83c0953825de62c6b113478
https://doi.org/10.1007/978-1-4899-0735-6_30
https://doi.org/10.1007/978-1-4899-0735-6_30
Publikováno v:
MRS Proceedings. 201
Thin ceramic films (A12O3 ZrO2, Si3N4, and BN) have been prepared by ion beam assisted deposition (IBAD) and their mechanical properties examined. The films exhibit extreme ductility and adhesion, with the former property possibly attributed to the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29e613a7323b01a64669fde2a32c871b
https://doi.org/10.1557/proc-201-201
https://doi.org/10.1557/proc-201-201