Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Thomas G. Steigerwald"'
Autor:
Saskia Schimmel, Ines Kobelt, Lukas Heinlein, Anna-Carina L. Kimmel, Thomas G. Steigerwald, Eberhard Schlücker, Peter Wellmann
Publikováno v:
Crystals, Vol 10, Iss 9, p 723 (2020)
A variety of functional nitride materials, including the important wide bandgap semiconductor GaN, can be crystallized in exceptionally good structural quality by the ammonothermal method. However, the further development of this method is hindered b
Externí odkaz:
https://doaj.org/article/72701d5ef8fe4217ba1c88deecc8d2ca
Publikováno v:
Ammonothermal Synthesis and Crystal Growth of Nitrides ISBN: 9783030563042
The following chapter is mainly aimed at simulators and crystal growers, as viscosity has an influence on the flow behaviour in the reactor and the diffusion coefficient in the crystal’s vicinity. So, the chapter gives an overview of influencing fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c61dcfaaf2f8e886e29b96fc312d8e1
https://doi.org/10.1007/978-3-030-56305-9_8
https://doi.org/10.1007/978-3-030-56305-9_8
Autor:
Eberhard Schluecker, Benjamin Hertweck, Lisa P. Freund, Thomas G. Steigerwald, Steven Griffiths, Mathias Göken, Steffen Neumeier, Anna-Carina L. Kimmel, Thomas F. Malkowski, James S. Speck
Publikováno v:
Journal of Crystal Growth. 498:289-300
Corrosion of process equipment during ammonothermal synthesis at high temperature and pressure is still one of the big limitations of this process because of reduced crystal quality and safety issues. In this paper we present preliminary ammonotherma
Autor:
Anna-Carina L. Kimmel, Thomas G. Steigerwald, Eberhard Schlücker, Peter J. Wellmann, Saskia Schimmel, Patrick Duchstein, Rainer Niewa, Dirk Zahn
Publikováno v:
Journal of Crystal Growth. 498:214-223
Formation and transport of Ga-containing intermediates are essential for ammonothermal bulk growth of GaN. In this work, in situ X-ray transmission measurements are established as a tool for monitoring face-selective dissolution of GaN crystals as we
Autor:
Benjamin Hertweck, Anna-Carina L. Kimmel, Thomas G. Steigerwald, Nicolas S. A. Alt, Eberhard Schlücker
Publikováno v:
Chemical Engineering & Technology. 41:994-1002
Autor:
Thomas G. Steigerwald, Johannes Balouschek, Eberhard Schluecker, Anna-Carina L. Kimmel, Nicolas S. A. Alt, Benjamin Hertweck
Publikováno v:
The Journal of Supercritical Fluids. 134:96-105
An optical cell was used in this work, which allows spectroscopic measurements of fluids up to 600 °C and 300 MPa. The maximum pressure reached in this work was 254 MPa and the internal cell temperature was a maximum of 563 °C at a heating temperat
Autor:
Nicolas S. A. Alt, Saskia Schimmel, Philipp Macher, Martina Koch, Peter J. Wellmann, Eberhard Schlücker, Anna-Carina L. Kimmel, Thomas G. Steigerwald
Publikováno v:
Journal of Crystal Growth. 479:59-66
Solubility and dissolution kinetics of GaN are investigated, as they represent essential parameters for ammonothermal crystal growth of GaN. In situ X-ray imaging is applied to monitor the dissolving crystal. Both ammonoacidic and ammonobasic conditi
Publikováno v:
Chemical Engineering & Technology. 40:1101-1106
Ultrasonic velocity measurement data has been established as a simple and convenient tool to determine different thermodynamic properties of liquids and solutions. Such measurements were carried out in situ to determine the solubility of NaN3 in liqu
Autor:
Nicolas S. A. Alt, Thomas G. Steigerwald, Benjamin Hertweck, Peter J. Wellmann, Eberhard Schlücker, Ulrike Künecke, Saskia Schimmel, Theresia M. M. Richter, Rainer Niewa, Michael W. Lindner
Publikováno v:
Journal of Crystal Growth. 418:64-69
Quantitative data on the solubility of GaN in supercritical ammonia using NH 4 F as mineralizer are reported. The solubility is determined by in situ x-ray imaging of the dissolution of GaN single crystals. First, solubility values obtained by this m
Autor:
Eberhard Schluecker, Peter J. Wellmann, Nicolas S. A. Alt, Saskia Schimmel, Thomas G. Steigerwald, Benjamin Hertweck
Publikováno v:
The Journal of Supercritical Fluids. 99:76-87
The ammonoacidic crystal growth is a comprehensive method for the synthesis of novel compounds like nitrides or amindes but also for the growth of bulk single crystals like gallium or aluminum nitride for power electronics and photonics. In this repo