Zobrazeno 1 - 10
of 141
pro vyhledávání: '"Thomas Fromherz"'
Autor:
Andrea Barone, Marco Clementi, Thanavorn Poempool, Alessandro Marcia, Daniele Bajoni, Marco Liscidini, Dario Gerace, Thomas Fromherz, Matteo Galli
Publikováno v:
APL Photonics, Vol 9, Iss 1, Pp 016110-016110-7 (2024)
Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such
Externí odkaz:
https://doaj.org/article/b119ed6fa28f40108712e3e68d54b668
Autor:
Jeffrey Schuster, Johannes Aberl, Lada Vukušić, Lukas Spindlberger, Heiko Groiss, Thomas Fromherz, Moritz Brehm, Friedrich Schäffler
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Abstract The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging
Externí odkaz:
https://doaj.org/article/21603fefc52d4e56b81388c8e6c87d0b
Autor:
Lukas Spindlberger, Johannes Aberl, Antonio Polimeni, Jeffrey Schuster, Julian Hörschläger, Tia Truglas, Heiko Groiss, Friedrich Schäffler, Thomas Fromherz, Moritz Brehm
Publikováno v:
Crystals, Vol 10, Iss 5, p 351 (2020)
While light-emitting nanostructures composed of group-IV materials fulfil the mandatory compatibility with CMOS-fabrication methods, factors such as the structural stability of the nanostructures upon thermal annealing, and the ensuing photoluminesce
Externí odkaz:
https://doaj.org/article/7802e6940b5948c48bc203e3fb67dae7
Autor:
Johannes Aberl, Thomas Fromherz, Friedrich Schäffler, Jeffrey Schuster, Lada Vukušić, Moritz Brehm, Heiko Groiss, Lukas Spindlberger
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Scientific Reports
Scientific Reports
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achie
Publikováno v:
Israel Journal of Chemistry. 62
Autor:
Thanavorn Poempool, Johannes Aberl, Marco Clementi, Lukas Spindlberger, Lada Vukušić, Matteo Galli, Dario Gerace, Frank Fournel, Jean-Michel Hartmann, Friedrich Schäffler, Moritz Brehm, Thomas Fromherz
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58f3aed698407718b3b1cb46ef8781cd
Publikováno v:
physica status solidi (a). 219:2200154
Autor:
Peter Blaha, Felipe Murphy-Armando, Karlheinz Schwarz, Moritz Brehm, Petr Steindl, Thomas Fromherz, Mark T. Lusk
Publikováno v:
Physical Review B, 103(8), 085310
The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the main bottleneck for complementary metal-oxide semiconductor-compatible short-distance data transmission, single-photon emission, and sensing based on sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bddc52f98212af9eaa2ba62e4ddb8e6c
http://hdl.handle.net/1887/3185460
http://hdl.handle.net/1887/3185460
Autor:
Thomas Fromherz, Guillermo Requena, Irina Hinterlechner, Pere Barriobero-Vila, Bernhard Reitinger, Peter Burgholzer
Publikováno v:
Nondestructive Testing and Evaluation. 33:130-138
Titanium is of great interest for metal processing industries due to its superior material properties, but it is also quite expensive. Therefore, a detailed knowledge of phase transformation and consequential the distribution of and phase in titanium
Autor:
Johannes, Aberl, Moritz, Brehm, Thomas, Fromherz, Jeffrey, Schuster, Jacopo, Frigerio, Patrick, Rauter
Publikováno v:
Optics express. 27(22)
We demonstrate p-type SiGe quantum well infrared photodetectors (QWIPs) on a strained-silicon-on-insulator (sSOI) substrate. The sSOI system allows strain-balancing between the QWIP heterostructure with an average composition of Si