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pro vyhledávání: '"Thomas F K, Weatherley"'
Autor:
Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Sáenz de Santa María Modroño, Danxuan Chen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Publikováno v:
Nanomaterials, Vol 13, Iss 18, p 2569 (2023)
In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (9 cm−2) is much lower than that of TD (2–3 × 1010 cm−2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of
Externí odkaz:
https://doaj.org/article/5580c7b8366f4676b8e2af8cdaf7fc0b
Publikováno v:
Materials
Nanoscale structure has a large effect on the optoelectronic properties of InGaN, a material vital for energy saving technologies such as light emitting diodes. Photoconductive atomic force microscopy (PC-AFM) provides a new way to investigate this e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7be6a261bc76a98cea2d73509d6f7227
https://pubmed.ncbi.nlm.nih.gov/30248899
https://pubmed.ncbi.nlm.nih.gov/30248899