Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Thomas Elster"'
Publikováno v:
Zeitschrift für Bankrecht und Bankwirtschaft. 19:345-364
Autor:
Monika Boettcher, Karl-Heinz Kliem, Ulf-Carsten Kirschstein, Steffen Jahr, Lutz Bettin, Ulrich Denker, Peter Hahmann, Bernd Schnabel, Thomas Elster
Publikováno v:
Microelectronic Engineering. 84:774-778
The tendency to smaller feature sizes is continuing in the microelectronic industry. EBDW is a well introduced method for research and development of semiconductor devices. A tool architecture based on the variable-shaped beam (VSB) principle offers
Autor:
Matthias Slodowski, Wolfgang Dorl, Joachim Heinitz, Matthias W. Klein, Thomas Elster, Hans-Joachim Doering, Ulf Weidenmüller, Ines A. Stolberg, Marc Schneider
Publikováno v:
Alternative Lithographic Technologies IV.
In the ITRS roadmap [1] increasingly long mask write and cycle time is explicitly addressed as a difficult challenge in mask fabrication for the 16nm technology node and beyond. Write time reduction demands have to be seen in relation to correspondin
Autor:
Ramona Eberhardt, Stefan Risse, Marcel Hornaff, Christoph Schenk, Christoph Damm, Ingo Schmidt, Hans-Joachim Döring, Andreas Kamm, Thomas Elster, Matthias Mohaupt, Roland Ramm, Ulf Carsten Kirschstein, Gunther Notni, Peter Kühmstedt
The fast and precise deflection of electron-beams is mandatory for common electron beam tools and next generation multi-beam lithography systems. Electrostatic fields generated by an arrangement of electrodes with several electric potentials are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e104278f7d8d10e43629c2b2c31a7517
https://publica.fraunhofer.de/handle/publica/229056
https://publica.fraunhofer.de/handle/publica/229056
Publikováno v:
Alternative Lithographic Technologies.
This paper describes a new multi beam approach in electron beam lithography called Multi Shaped Beam (MSB). Based on the well known Variable Shaped Beam (VSB) principle, the single shaped beam arrangement is extended and complemented by an array of i
Autor:
Maati Talmi, Peter Jochl, Thomas Elster, Ramona Eberhardt, Ernst Haugeneder, Stefan Eder-Kapl, Hans-Joachim Doering, Olaf Fortagne, Juergen Saniter, Klaus Reimer, Joachim Heinitz, Gertraud Lammer, Klaus Kroenert, Christoph Brandstaetter, Hans Loeschner
Publikováno v:
SPIE Proceedings.
Electron beam based Projection Mask-Less Lithography (PML2) is one of the promising candidates for fast chip devel-opment and prototyping as well as for small and medium volume device production for the 45nm technology node and beyond. The concept of
Autor:
Hans-Joachim Doering, Olaf Fortagne, Juergen Saniter, Thomas Elster, Gertraud Lammer, Joerg Eichholz, Ernst Haugeneder, Klaus Reimer, Joachim Heinitz, Stefan Eder-Kapl, Christoph Brandstaetter, Hans Loeschner
Publikováno v:
SPIE Proceedings.
Electron beam based Projection Mask-Less Lithography (PML2) is one of the promising candidates for small and medium volume device production for the 45nm technology node and beyond. The concept of the PML2 proof-of-concept tool, to be realized as par
Autor:
Herbert Buschbeck, Hans-Joachim Döring, Olaf Fortagne, Gertraud Lammer, Christoph Brandstatter, Gerhard Stengl, Thomas Elster, Elmar Platzgummer, Hans Loeschner
Publikováno v:
SPIE Proceedings.
Recent studies have shown the feasibility of Projection Mask-Less Lithography (PML2) for small and medium volume device production (2-5 WPH) for the 45nm technology node. This PML2 tool concept comprises a combined electrostatic-magnetic electron opt
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
An overview will be presented of high-resolution e-beam lithography equipment issues and processes used in the fabrication of photomasks/reticles needed for 100nm maskmaking. As reported and discussed repeatedly, the emerging advanced optical and nex
Autor:
Thomas Elster
Publikováno v:
General Relativity and Gravitation. 12:1015-1027
Wavelike perturbations of a system consisting of a gravitational and an electromagnetic field and a dust with a small ionized component are studied. By using the spin coefficient formalism we expand the perturbations of the various quantities charact