Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Thomas E. Zipperian"'
Autor:
Kees Eijkel, Bruce A. Kirchhoff, Steven T. Walsh, C.N.R. Rao, A.D. Romig, Justine Johannes, Thomas E. Zipperian, H. S. Mani, Arnonld B. Baker
Publikováno v:
Technological forecasting and social change, 74(9), 1634-1642. Elsevier
Nanotechnology has captured wide attention all over the world and excited the imagination of young and old alike. Interest in the subject has increased remarkably during the last few years because of potential technological applications, and commerci
Autor:
Jon S. Martens, David S. Ginley, J.K. Truman, Chris P. Tigges, Thomas E. Zipperian, Vincent M. Hietala, T.A. Plut
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 42:972-975
A novel superconducting slow-wave transmission line has been prepared by overlaying a superconducting coplanar waveguide with normal metal crossbars. The crossbars increase the energy storage along the transmission line, reducing the line's group vel
Autor:
Thomas E. Zipperian, Gregory A. Vawter, Jon S. Martens, Chris P. Tigges, David S. Ginley, Vincent M. Hietala
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 2:74-78
The authors report the fabrication of long, step-edge junctions using TlCaBaCuO with associated control lines that demonstrate strong modulation of critical current, usable current gains, large power gains, and fairly large bandwidths. The devices ar
Autor:
Abhaya K. Datye, L. R. Dawson, Gregory A. Vawter, I. J. Fritz, David R. Myers, T.J. Drummond, D. S. Simons, J. Comas, Eric D. Jones, Thomas M. Brennan, Thomas E. Zipperian, B. E. Hammons
Publikováno v:
IEEE Transactions on Electron Devices. 39:41-49
The authors examine ion implantation and rapid-thermal processing for the fabrication of quantum-well, compound-semiconductor heterostructure devices in strained and in lattice-matched material systems. The authors demonstrate improvements to the per
Autor:
David S. Ginley, J. S. Martens, Vincent M. Hietala, T.A. Plut, Chris P. Tigges, Thomas E. Zipperian
Publikováno v:
Journal of Applied Physics. 69:8268-8271
The effects of several microelectronic processing sequences on the high‐frequency surface resistance of the high‐temperature superconducting thin films in the TlCaBaCuO system have been examined. These processes include an acid etch, Br/alcohol e
Autor:
L. R. Dawson, M. A. Dvorack, Thomas E. Zipperian, R. C. Hughes, R. J. Walko, Robert M. Biefeld
Publikováno v:
Journal of Applied Physics. 69:6500-6505
There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio‐luminescent sources, and low noise blue‐green photodiodes. We report the properties of two types of GaP junctions; a Schot
Autor:
David S. Ginley, Jon S. Martens, Chris P. Tigges, Thomas E. Zipperian, Julia M. Phillips, Vincent M. Hietala
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:2018-2025
Microwave two-port S-parameter measurements and modeling of superconducting flux flow transistors are presented. The transistors, based on the magnetic control of flux flow in any array of high temperature superconducting weak links, exhibit signific
Publikováno v:
Superlattices and Microstructures. 10:99-106
We present calculations and data on superpositioning of light- and heavy-hole band-edge states in InxGa1−xAsInyAl1−yAs multiple strained quantum-well structures. This superpositioning, produced by tailoring the built-in biaxial tensile strain in
Publikováno v:
Journal of Electronic Materials. 19:533-537
The 4-K photoluminescence spectrum and room temperature transconductance for modulation dopedp-type GaAs/(In,Ga)As dual-channel strained-quantum-well field-effect transistors with comparable dopant and 2-D carrier concentrations were studied. All gat
Publikováno v:
50th Annual Device Research Conference.