Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Thomas E. Nohava"'
Autor:
J.D. Brown, J.D. Benson, J. Boney, Thomas E. Nohava, K.V. Dang, Subash Krishnankutty, W. Yang, S. Harney, J. F. Schetzina, J. Matthews
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:35-41
Visible-blind UV cameras based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c74a61a0d38a3ffcad733784876f6385
https://doi.org/10.1557/s1092578300004051
https://doi.org/10.1557/s1092578300004051
Autor:
Thomas E. Nohava, P. Joslyn, C.J. Han, P.P. Ruden, Michael Shur, D.E. Grider, K. Newstrom, D.H. Narum
Publikováno v:
IEEE Transactions on Electron Devices. 37:530-535
Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFETs) for gate lengths of between 0.4 and 10 mu m are reported. The devices studied were fabricated by a self-aligned gate process. Trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd49b303a299bc601b106691513fb15f
https://doi.org/10.1109/16.47754
https://doi.org/10.1109/16.47754
Autor:
Holly A. Marsh, Thomas E. Nohava, W. Yang, Robert C. Torreano, Subash Krishnankutty, Scott A. McPherson
Publikováno v:
Applied Physics Letters. 73:978-980
A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10 5 . From 360 nm to 400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f57c906fbd56c6a898a3971973b8e409
https://doi.org/10.1063/1.122058
https://doi.org/10.1063/1.122058
Autor:
Michael Shur, D.H. Narum, D.E. Grider, Thomas E. Nohava, P. Joslyn, C.J. Han, K. Newstrom, P.P. Ruden
Publikováno v:
Scopus-Elsevier
Heterostructure FETs fabricated on a doped InGaAs channel heterostructure yielded device performance superior to that of devices on a conventional superlattice MODFET structure A comparison is made for 0.4-10- mu m-gate-length FETs fabricated with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc8361ab85b8fe375d8df14d43636d9a
https://doi.org/10.1109/iedm.1989.74242
https://doi.org/10.1109/iedm.1989.74242
Autor:
S.S. Swirhun, J.J. Stronczer, Jim Nohava, P.P. Ruden, Thomas E. Nohava, D.E. Grider, I.R. Mactaggart
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The authors report on the device and circuit performance of delta-doped complementary heterostructure insulated gate field effect transistors (C-HIGFETs) which make use of a high InAs mole fraction (y-value) pseudomorphic In/sub y/Ga/sub 1-y/As chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::947faaab5c9129089c6da8fa53adaeaa
https://doi.org/10.1109/iedm.1991.235459
https://doi.org/10.1109/iedm.1991.235459
Autor:
J.J. Stronczer, D.E. Grider, Thomas E. Nohava, Jim Nohava, P.P. Ruden, I.R. Mactaggart, David E. Tetzlaff, D. Fulkerson
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
Delta-doped pseudomorphic In/sub y/Ga/sub 1-y/As channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11530ee0e8bb30b70283ae950a0f0060
https://doi.org/10.1109/gaas.1991.172636
https://doi.org/10.1109/gaas.1991.172636
Autor:
P. Joslyn, J.E. Breezley, D.E. Grider, P.P. Ruden, R. Mactaggart, D. Tetzlaff, A.I. Akinwande, Jim Nohava, Thomas E. Nohava
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
A complementary heterostructure insulated gate field effect transistor (c-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1 mu m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff03022dfd345ea2a67f4204c6a1026
https://doi.org/10.1109/gaas.1990.175471
https://doi.org/10.1109/gaas.1990.175471
Autor:
P.P. Ruden, J.E. Breezley, Thomas E. Nohava, D.E. Grider, Jim Nohava, P. Joslyn, A.I. Akinwande
Publikováno v:
International Technical Digest on Electron Devices.
The authors report on a complementary III-V heterostructure FET (HFET) technology that makes use of high AlAs mole fraction (Al,Ga)As barrier layers to reduce the gate leakage currents of n- and p-channel heterostructure FETs. The subthreshold curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0366111d1862e696e02a85d4948cc07a
https://doi.org/10.1109/iedm.1990.237075
https://doi.org/10.1109/iedm.1990.237075
Autor:
Christopher J. Zins, Jeff A. Ridley, Thomas E. Nohava, K. Newstrom, Robert E. Higashi, Barry E. Cole, James O. Holmen
Publikováno v:
SPIE Proceedings.
Honeywell has developed a high-speed infrared emitter pixel and implemented the design on two 512 X 512 scene projector array designs. This pixel is a faster version of the original Gen-III Gossamer pixel implemented on previous 512 X 512 arrays. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2b7eb1c08657029ff2fca28a9f9d7c
https://doi.org/10.1117/12.438064
https://doi.org/10.1117/12.438064
Autor:
J.D. Brown, J. F. Schetzina, Subash Krishnankutty, J. Matthews, Thomas E. Nohava, P. Srinivasan, W. Yang, J. Boney
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5
An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73636d3baed5bda8a9e7cde50405e2c
https://doi.org/10.1557/s1092578300000065
https://doi.org/10.1557/s1092578300000065