Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Thomas E. Kopley"'
Autor:
Sujay Singh, Thomas Dixon, Andrew Zedolik, Jifa Hao, Joe Fazio, Thomas E. Kopley, Daniel Hoffman
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 7:1608-1616
Thermal runaway is among the major failure mechanisms of power semiconductor packages. Thermal dissipation of power electronics depends on the quality of the solder die-attach, any defects such as voids, and delamination-impede heat dissipation that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22ae34e22143ee1536d93176509ac531
https://doi.org/10.1109/tcpmt.2017.2742467
https://doi.org/10.1109/tcpmt.2017.2742467
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
As silicon power integrated circuits continue to shrink in scale to enable inclusion in mobile devices, the use of wafer level chip scale packages (WLCSPs) is becoming more common. Power devices are typically used in applications where a high current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dfd68eb31d331608a03f151a7cbdaf1
https://doi.org/10.1109/iirw.2017.8361229
https://doi.org/10.1109/iirw.2017.8361229
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
A systematic study of self heating caused by hot-carrier (HC) stress in packaged thick gate oxide HV LDMOS devices (Laterally Diffused MOSFETs), and how self heating significantly affects HC degradation characteristics is presented. The time delay be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a6a8b3b923e7ae4557c781954fbab3
https://doi.org/10.1109/irps.2017.7936400
https://doi.org/10.1109/irps.2017.7936400
Publikováno v:
2016 IEEE International Integrated Reliability Workshop (IIRW).
We present a framework for circuit-level and application-level gate oxide wearout analysis using a quasi-static AC Time-Dependent Dielectric Breakdown (TDDB) model. The method can assess the gate oxide wearout rate for analog circuit blocks operating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e56f0a2905a1780036573672915c366
https://doi.org/10.1109/iirw.2016.7904905
https://doi.org/10.1109/iirw.2016.7904905
Publikováno v:
Nano Letters. 8:3325-3329
We report a simple fabrication method of creating a three-dimensional single-walled carbon nanotube (CNT) architecture in which suspended CNTs are aligned parallel to each other along the conventionally unused third dimension at lithographically defi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f2379d798297f956f3dff6a7480efaf
https://doi.org/10.1021/nl801744z
https://doi.org/10.1021/nl801744z
Publikováno v:
The Journal of Physical Chemistry B. 110:6655-6660
We report the use of the block copolymer micelle approach to produce various transition metal nanoparticles such as iron, cobalt, and nickel with precisely controlled size and spacing. These uniformly sized catalyst nanoparticles derived from the blo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53fc9ddb8188c80336667e767430e9a2
https://doi.org/10.1021/jp057085g
https://doi.org/10.1021/jp057085g
Autor:
Thomas E. Kopley, Jie Liu, Jennifer Q. Lu, Danielle R. Chamberlin, Mitchell A. Winnik, Ian Manners, Daniel B. Roitman, Qiang Fu, Thomas M. Russell, Nick Moll, David A. Rider
Publikováno v:
Chemistry of Materials. 17:2227-2231
Catalytically active iron-containing silicon nanostructures prepared from a polyferrocenylsilane diblock copolymer have been used to produce single-walled carbon nanotubes with diameters of 1 nm or less. Spatially selective growth of carbon nanotubes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e537c734d6e614f65c8d1b5613587f14
https://doi.org/10.1021/cm048030e
https://doi.org/10.1021/cm048030e
Publikováno v:
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).
This paper reports on self heating caused by hot-carrier (HC) stress in packaged thick gate oxide HV LDMOS devices, and how self heating significantly affects HC degradation characteristics. The time delay between the removal of the HC stress and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a7c70dcd15df1b578e0907626047dd1
https://doi.org/10.1109/iirw.2014.7049527
https://doi.org/10.1109/iirw.2014.7049527
Autor:
Cheng Qian, Jennifer Lu, Hyungbin Son, Dave Dutton, Mildred S. Dresselhaus, Jing Kong, Jie Liu, Thomas E. Kopley
Publikováno v:
The journal of physical chemistry. B. 110(22)
Using self-assembled block copolymers as templates, catalytically active nanostructures with controlled size and space have been produced. A self-assembled polystyrene-b-polyferrocenylsilane thin film and monolayer of surface micelles of cobalt-compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8fc833bd54635a16c920d104b613c9f
https://pubmed.ncbi.nlm.nih.gov/16771301
https://pubmed.ncbi.nlm.nih.gov/16771301
Publikováno v:
33rd IEEE International Reliability Physics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80a214e368f93029ce99a48ad0e445a
https://doi.org/10.1109/irps.1995.363709
https://doi.org/10.1109/irps.1995.363709