Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Thomas E. Kazior"'
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b18d3e47a2a3905131229b4ae0e011c
https://doi.org/10.1109/ims37962.2022.9865442
https://doi.org/10.1109/ims37962.2022.9865442
Publikováno v:
ECS Transactions. 50:1039-1045
Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48331d9e9dc7c7302a10b35022940df
https://doi.org/10.1149/05009.1039ecst
https://doi.org/10.1149/05009.1039ecst
Publikováno v:
Journal of Electronic Packaging. 139
In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18fb4399c7012417e7f95ba9381bdc37
https://doi.org/10.1115/1.4035064
https://doi.org/10.1115/1.4035064
Autor:
Jeffery R. LaRoche, Theodore D. Kennedy, John U. Knickerbocker, Cornelia K. Tsang, Thomas E. Kazior, Lovelace Soirez, Kelly P. Ip
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything, particularly for high performance, high frequency RF and mixed signal applications. As a result circuits based on other materials systems, su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99b5c2df8f1f10c41a209f7194e3b88c
https://doi.org/10.1109/csics.2015.7314517
https://doi.org/10.1109/csics.2015.7314517
Autor:
P. Balas, C.S. Whelan, Thomas E. Kazior, Y. Zhang, P.F. Marsh, S.J. Lichwala, William E. Hoke, R.E. Leoni, Steven M. Lardizabal
Publikováno v:
International Journal of High Speed Electronics and Systems. 13:65-89
GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs is eliminated in metamorphic devices by providing a properly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c026ce8de03f6f072b0cc660193b07
https://doi.org/10.1142/s0129156403001533
https://doi.org/10.1142/s0129156403001533
Autor:
Thomas E. Kazior, P.F. Marsh, C.S. Whelan, Iii. R.E. Leoni, S.J. Lichwala, W. E. Hoke, P. J. Lemonias, S.M. Lardizabal, P. Lyman, R.A. McTaggart
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1307-1311
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0992f9e74ff0157ca54b0b447bb9b583
https://doi.org/10.1109/4.868040
https://doi.org/10.1109/4.868040
Autor:
C.S. Whelan, Thomas E. Kazior, P.F. Marsh, P. Lyman, M. Lardizabal, R.A. McTaggart, W.F. Hoke
Publikováno v:
IEEE Electron Device Letters. 21:5-8
A double-pulse-doped InAlGaAs/In/sub 0.43/Ga/sub 0.57/As metamorphic high electron mobility transistor (MHEMT) on a GaAs substrate is demonstrated with state-of-the-art noise and power performance, This 0.15 /spl mu/m T-gate MHEMT exhibits high on- a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdeeb19c7af8a3c42ed6919966036d27
https://doi.org/10.1109/55.817435
https://doi.org/10.1109/55.817435
Autor:
Thomas E. Kazior
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We summarize results on the successful integration of III-V electronic devices with Si CMOS on a common silicon substrate using a fabrication process similar to SiGe BiCMOS. The heterogeneous integration of III-V devices with Si CMOS enables a new cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9964c2b8b9241167d1b36c0ce523dde6
https://doi.org/10.1109/iedm.2013.6724711
https://doi.org/10.1109/iedm.2013.6724711
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything and circuits based on other materials systems are required. What is the best way to integrate these dissimilar materials and enhance the capab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07d79223beb2b068b62b0de1d3fc504
https://doi.org/10.1109/csics.2013.6659239
https://doi.org/10.1109/csics.2013.6659239
Autor:
R.E. Leoni, C.S. Whelan, William E. Hoke, Thomas E. Kazior, P.F. Marsh, J.B. Hunt, C.M. Laighton, Y. Zhang
Publikováno v:
IEEE Electron Device Letters. 24:529-531
An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd4911cf1a41363615304b74ad8291c8
https://doi.org/10.1109/led.2003.815432
https://doi.org/10.1109/led.2003.815432