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pro vyhledávání: '"Thomas Carl Ulrich Tromm"'
Autor:
Qing-Tai Zhao, Qinghua Han, Paulus Aleksa, Siegfried Mantl, Juergen Schubert, Thomas Carl Ulrich Tromm
Publikováno v:
Solid-State Electronics. 159:71-76
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon be
Autor:
Thomas Carl Ulrich Tromm, Siegfried Mantl, Paulus Aleksa, Juergen Schubert, Michael J. Hoffmann, Qing-Tai Zhao, Qinghua Han, Uwe Schroeder
Publikováno v:
IEEE Transactions on Electron Devices. 65:4641-4645
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e.,
Autor:
Thomas Carl Ulrich Tromm, Astrid Besmehn, Siegfried Mantl, Martin Mikulics, Hilde Hardtdegen, Jürgen Schubert, Martina Luysberg, A. Schafer, Fabian Andreas Wendt
Publikováno v:
ECS Transactions. 72:307-317
To proceed the miniaturization of electronic devices new materials and new device designs are needed. A promising candidate for future gate dielectrics are ternary rare earth oxides which exhibit permittivities up to 40. Such amorphous oxides (e.g. G
Publikováno v:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers,