Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Thomas Bert Gorczyca"'
Autor:
Jamie Prudhomme, Alexander Bialy, Daniel Franca, Nick Yun, Pui Yee Hung, Brian Sapp, Woongje Sung, Thomas Bert Gorczyca, Anne Sophie Larrea, Wen Li Collison, Eric Liu, Sean Valente, Shannon Dunn, Jeffrey Hedrick
Publikováno v:
Materials Science Forum. 963:558-561
This paper presents the development of 1700V-rated 4H-SiC JBS diodes in the state-of-the-art 6-inch SiC-dedicated foundry, NY-PEMC (New York- Power Electronics Manufacturing Consortium). The critical considerations in developing the SiC JBS diode inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff56c5e7eb838f9addad2d9b93ff9ca
https://doi.org/10.4028/www.scientific.net/msf.963.558
https://doi.org/10.4028/www.scientific.net/msf.963.558
Autor:
David Richard Esler, Ljubisa Dragoljub Stevanovic, Greg Dunne, David Alan Lilienfeld, Stacey Kennerly, Peter Deeb, Peter Almern Losee, Christopher Collazo-Davila, James W. Kretchmer, Alexander Viktorovich Bolotnikov, Thomas Bert Gorczyca
Publikováno v:
Materials Science Forum. 858:876-879
In this paper, we show state of the art, low on-resistance, 25mW/1.2kV and 43mW/2.5kV SiC MOSFETs with excellent design robustness and process control such that the parametric spread of key device characteristics are approaching Si products. The impa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e23cb790b39ddf0e66b443f4e60551
https://doi.org/10.4028/www.scientific.net/msf.858.876
https://doi.org/10.4028/www.scientific.net/msf.858.876
Autor:
John Byrnes, Stephen Daley Arthur, J. Jay McMahon, Bob Hillard, David Alan Lilienfeld, Thomas Bert Gorczyca, Mo Jahanbani, J. Formica, Pete Gipp, L. Shen, M. Yamagami
Publikováno v:
ECS Transactions. 69:269-276
Silicon carbide (SiC) device fabrication technology shares many similarities with Si manufacturing, but identifying whether material differences affect cleaning capability is of interest for this growing field. Material parameter differences include
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8080a6ec13b2326a6152dc02b9ad3e
https://doi.org/10.1149/06908.0269ecst
https://doi.org/10.1149/06908.0269ecst
Autor:
Min-Yi Shih, Thomas Bert Gorczyca, Eric Michael Breitung, Christoph Kapusta, Samhita Dasgupta, Christoph Georg Erben, Todd Ryan Tolliver
Publikováno v:
SPIE Proceedings.
Polymers have been studied as an alternate material to silica for optical interconnects and photonic devices for the last decade. In this paper we review the work performed at GE Global Research in the area of polymer based material systems for photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77b5b40dd9801bfe2d294f5f29bc861f
https://doi.org/10.1117/12.563835
https://doi.org/10.1117/12.563835
Autor:
Christoph Georg Erben, Glenn Scott Claydon, Min-Yi Shih, Matthew Christian Nielsen, Eric Michael Breitung, Samhita Dasgupta, Todd Ryan Tolliver, William Paul Kornrumpf, Ernest Wayne Balch, Renato Guida, Thomas Bert Gorczyca
Publikováno v:
SPIE Proceedings.
The development of a photonic backplane for high-speed and high-bandwidth communications is presented. This hybrid, multimode, multi-channel backplane structure contains both electrical and optical interconnects, suitable for next-generation high-spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b0abc9ed316621f5ef24a5bf71051ad
https://doi.org/10.1117/12.560093
https://doi.org/10.1117/12.560093
Autor:
Matthew Christian Nielsen, Ernest Wayne Balch, Todd Ryan Tolliver, Glenn Scott Claydon, Min-Yi Shih, Thomas Bert Gorczyca, Leonard Richard Douglas, Samhita Dasgupta
Publikováno v:
Organic Photonic Materials and Devices VI.
A new method of interconnecting various optoelectronic components is discussed. Offset error up to 25 microns can be corrected to achieve single mode alignment accuracies. Several planar optical devices were photocomposed using the adaptive photolith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53d671937dd622c1f7c97289965a4d74
https://doi.org/10.1117/12.529934
https://doi.org/10.1117/12.529934
Autor:
Kung-Li Deng, Thomas Bert Gorczyca, James Loman, Matthew Christian Nielsen, Min-Yi Shih, Todd Ryan Tolliver, Renato Guida
Publikováno v:
SPIE Proceedings.
Based on radiation mode coupling through a self-formed polymer waveguide extension, efficient single-mode optical coupling can be achieved between active and passive chips while relaxing the stringent positioning requirements. A 20dB improvement can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf1b5f054dfef3f8f26d98217d8b4c0
https://doi.org/10.1117/12.529221
https://doi.org/10.1117/12.529221
Autor:
Thomas Bert Gorczyca, Min-Yi Shih
Publikováno v:
SPIE Proceedings.
A photo patterned fabrication process for manufacture of passive polymer composite waveguide structures and devices is presented. The process takes advantage of compatibility between certain polymer/high vapor pressure monomer blends and their refrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a1b2aec629dec543605e798490d1296
https://doi.org/10.1117/12.504749
https://doi.org/10.1117/12.504749
Autor:
Bernard Gorowitz, Herbert Stanley Cole, Thomas Bert Gorczyca, Robert John Wojnarowski, John H. Lupinski
Publikováno v:
MRS Proceedings. 264
In the GE High-Density Interconnect Process, thermoplastic polyetherimide adhesives with selectively variable glass transition temperatures (Tg's) are used as chip attach and overlay adhesive. Alternating layers of patterned metal and dielectric are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e600edf7b49126b66195692dec09f89
https://doi.org/10.1557/proc-264-43
https://doi.org/10.1557/proc-264-43
Publikováno v:
Journal of The Electrochemical Society. 136:2765-2766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778ea60ba1ab87e9ec51255b4dbf2d01
https://doi.org/10.1149/1.2097591
https://doi.org/10.1149/1.2097591