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pro vyhledávání: '"Thomas Bauvent"'
Autor:
Thomas Bauvent, Paola Trotti, Olivier Billoint, Jean-François Nodin, Yasser Moursy, Gabriel Molas, Gaël Pillonnet
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, In press, pp.1-4. ⟨10.1109/LED.2023.3274219⟩
IEEE Electron Device Letters, In press, pp.1-4. ⟨10.1109/LED.2023.3274219⟩
International audience; Embedded resistive random access memories (RRAM) are commonly written using voltage programming scheme. In this work, we study the device performance under an alternative programming approach. Utilizing the parasitic line capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ce1bb4f8ac1892ae29349fdbf5bdd31
https://hal.science/hal-04115343/file/manuscript_doi_and_copyright.pdf
https://hal.science/hal-04115343/file/manuscript_doi_and_copyright.pdf
