Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Thomas Basler"'
Autor:
Xing Liu, Thomas Basler
Publikováno v:
IEEE Transactions on Electron Devices. 70:1763-1768
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be593ba8aa1513aec10b80486d09eb38
https://doi.org/10.1109/ted.2023.3247371
https://doi.org/10.1109/ted.2023.3247371
Publikováno v:
IEEE Transactions on Power Electronics. 38:491-499
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a646e57f951e261d628c2619188ea7
https://doi.org/10.1109/tpel.2022.3204717
https://doi.org/10.1109/tpel.2022.3204717
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416a124f5ca9be0f05e8ee403930f28c
https://doi.org/10.1109/irps48203.2023.10118274
https://doi.org/10.1109/irps48203.2023.10118274
Autor:
Josef Lutz, Thomas Basler
Publikováno v:
Wide Bandgap Semiconductors for Power Electronics. :387-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4abf629ad4777c7686a52563e717a789
https://doi.org/10.1002/9783527824724.ch14
https://doi.org/10.1002/9783527824724.ch14
Publikováno v:
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfd4ded0b78016823a66f7fec8c7a64
https://doi.org/10.1109/wipdaeurope55971.2022.9936535
https://doi.org/10.1109/wipdaeurope55971.2022.9936535
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology
In this article, the influence of the insulated gate bipolar transistor (IGBT) chip-near temperature gradient on the failure modes in the power cycling test is investigated with the finite element (FE) simulation and experiment. Two important aspects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f5b65f9dac3cd7eb7b817d1ff3d920c
https://doi.org/10.1109/tcpmt.2021.3058201
https://doi.org/10.1109/tcpmt.2021.3058201
Autor:
Shanmuganathan Palanisamy, Thomas Basler, Xing Liu, Clemens Herrmann, Rudolf Elpelt, Paul Sochor
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e497665b1394869d8f8f3ea906a21959
https://doi.org/10.1109/ispsd49238.2022.9813611
https://doi.org/10.1109/ispsd49238.2022.9813611
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560967e7d2c231ac7e22308d8e6729a4
https://doi.org/10.1109/ispsd49238.2022.9813675
https://doi.org/10.1109/ispsd49238.2022.9813675
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper the gate oxide reliability of SiC MOSFETs has been tested under different stress conditions. Discrete devices of the 1.2 kV class with planar and trench MOS-structure have been examined under positive and negative stair-shaped increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3cc5eaeb07d68ff4c32c70099f5681c
https://doi.org/10.23919/ispsd50666.2021.9452301
https://doi.org/10.23919/ispsd50666.2021.9452301
Autor:
L. Wehrhahn-Kilian, Rudolf Elpelt, Shanmuganathan Palanisamy, C. Kunzel, Thomas Basler, Josef Lutz
Publikováno v:
IRPS
Bipolar degradation continues to be a key issue that should be taken into account in 4H-SiC devices using bipolar operation modes. The generation and expansion of recombination-induced stacking faults (SFs) in 4H-SiC devices results in a forward-volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4731a5714befdf81c1c7022588b2ff
https://doi.org/10.1109/irps46558.2021.9405183
https://doi.org/10.1109/irps46558.2021.9405183