Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Thomas B. Faure"'
Autor:
Thomas B. Faure, Paul W. Ackmann
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76bb4f0ae1f29b73473692f0867a8591
https://doi.org/10.1117/12.2035650
https://doi.org/10.1117/12.2035650
Autor:
Takeshi Isogawa, Richard Wistrom, Thomas B. Faure, Yoshifumi Sakamoto, Jeffery Panton, Anne E. McGuire
Publikováno v:
SPIE Proceedings.
As optical lithography is extended to the 14nm and 10nm technology nodes, sidewall angle (SWA) control of photomask features becomes increasingly important. The experiments to be reported here study SWA for advanced attenuated phase-shift photomasks.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c926099a59b3d057b3f792c7332a43
https://doi.org/10.1117/12.2026853
https://doi.org/10.1117/12.2026853
Autor:
Thomas B. Faure, Frank E. Abboud
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc9073ef9278915c76daa7e4441ffce
https://doi.org/10.1117/12.2008671
https://doi.org/10.1117/12.2008671
Autor:
Shaun Crawford, Thomas B. Faure, Peter H. Bartlau, Satoru Nemoto, Richard Wistrom, Amy E. Zweber, Toru Komizo, Gary Reid
Publikováno v:
SPIE Proceedings.
Use of optical photomasks will extend to the 22-nm node and beyond. Mask minimum resolution and critical dimension (CD) requirements for this node are very challenging to the mask industry. Optimization of resist materials and resist thickness are ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4c8cb092862d56471316cb1016324c
https://doi.org/10.1117/12.824248
https://doi.org/10.1117/12.824248
Autor:
Ken Racette, Louis Kindt, Alfred Wagner, Amy E. Zweber, Thomas B. Faure, Toru Komizo, Satoru Nemoto, Michael S. Hibbs, Yasutaka Kikuchi, Richard Wistrom, Emily Gallagher
Publikováno v:
Photomask Technology 2008.
During the development of optical lithography extensions for 32nm, both binary and attenuated phase shift Reticle Enhancement Technologies (RETs) were evaluated. The mask blank has a very strong influence on the minimum feature size and critical dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e02206d503177157596633c869cbaf
https://doi.org/10.1117/12.801950
https://doi.org/10.1117/12.801950
Autor:
Steven C. Nash, Atsushi Kominato, Thomas B. Faure, Ken Racette, Yasutaka Kikuchi, Toshiyuki Suzuki, Louis Kindt, Richard Wistrom, Satoru Nemoto, Emily Gallagher, Yushin Sasaki, Toru Komizo
Publikováno v:
SPIE Proceedings.
As optical lithography is extended for use in manufacturing 45 nm devices, it becomes increasingly important to maximize the lithography process window and enable the largest depth of focus possible at the wafer stepper. Consequently it is very impor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63aa7fece0946ed130d4a41b215ed55d
https://doi.org/10.1117/12.748664
https://doi.org/10.1117/12.748664
Publikováno v:
SPIE Proceedings.
A new chrome etch system was acquired and implemented to manufacture 65 nm node critical level masks. The etch performance of FEP 171, ZEP 7000, NEB 22, and REAP 200 resist systems in this new chrome etch system was evaluated. The critical dimension
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f19abc12e050d36e5c5b48ef68e9992
https://doi.org/10.1117/12.568539
https://doi.org/10.1117/12.568539
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
Use of accurate and repeatable endpoint detection during dry etch processing of photomask is very important for obtaining good mask mean-to-target and CD uniformity performance. It was found that the typical laser reflectivity endpoint detecting syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2a530c9f36fafa8d373cb81a420592
https://doi.org/10.1117/12.458343
https://doi.org/10.1117/12.458343
Autor:
Wu-Song Huang, Ranee W. Kwong, Wayne M. Moreau, Robert Lang, Christopher F. Robinson, David R. Medeiros, Karen E. Petrillo, Ari Aviram, Arpan P. Mahorowala, Marie Angelopoulos, Christopher Magg, Mark Lawliss, Thomas B. Faure
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ff357696f5290edf1756f1f397822b2
https://doi.org/10.1117/12.438350
https://doi.org/10.1117/12.438350
Autor:
Wu-Song Huang, Christopher F. Robinson, Ranee W. Kwong, David R. Medeiros, Karen Petrillo, Robert Lang, Thomas B. Faure, Christopher Magg, Mark Lawliss, Arpan P. Mahorowala, Marie Angelopoulos, Ari Aviram, Wayne M. Moreau
Publikováno v:
SPIE Proceedings.
Recently, there is a significant interest in using CA resists for electron beam (E-beam) mask making application. CA resists provide superior lithographic performance in comparison to traditional non CA E-beam resists in particular high contrast, res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f7a56dea8cdc48a84c289530e6cc93
https://doi.org/10.1117/12.436656
https://doi.org/10.1117/12.436656