Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Thomas A. Zirkle"'
Autor:
Matthew J. Filmer, Matthew Huebner, Thomas A. Zirkle, Xavier Jehl, Marc Sanquer, Jonathan D. Chisum, Alexei O. Orlov, Gregory L. Snider
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Sensitive dispersive readouts of single-electron devices (“gate reflectometry”) rely on one-port radio-frequency (RF) reflectometry to read out the state of the sensor. A standard practice in reflectometry measurements is to design an im
Externí odkaz:
https://doaj.org/article/09338ece8b174bedbf6a93dd4bf41339
Autor:
Thomas A. Zirkle, Matthew J. Filmer, Jonathan Chisum, Alexei O. Orlov, Eva Dupont-Ferrier, Joffrey Rivard, Matthew Huebner, Marc Sanquer, Xavier Jehl, Gregory L. Snider
Publikováno v:
Applied Sciences, Vol 10, Iss 24, p 8797 (2020)
Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used f
Externí odkaz:
https://doaj.org/article/d322d20fe10646308c56b665bcd00485
Autor:
Matthew J. Filmer, Matthew Huebner, Thomas A. Zirkle, Xavier Jehl, Marc Sanquer, Jonathan D. Chisum, Alexei O. Orlov, Gregory L. Snider
Publikováno v:
Scientific Reports
Scientific Reports, 2022, 12 (1), pp.3098. ⟨10.1038/s41598-022-06727-1⟩
Scientific Reports, 2022, 12 (1), pp.3098. ⟨10.1038/s41598-022-06727-1⟩
Sensitive dispersive readouts of single-electron devices (“gate reflectometry”) rely on one-port radio-frequency (RF) reflectometry to read out the state of the sensor. A standard practice in reflectometry measurements is to design an impedance t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b381e775b83c6b8761bf7b5ba7bf2b8
https://pubmed.ncbi.nlm.nih.gov/35197499
https://pubmed.ncbi.nlm.nih.gov/35197499
Publikováno v:
Journal of Low Temperature Physics. 195:419-428
In this paper, we present results demonstrating the effect of temperature on singularity matching (SM) tunneling down to 300 mK in superconducting single-electron transistors (SSETs). The studied SSETs have charging energies significantly larger than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0acf292d232d52b21963a3c029a44db
https://doi.org/10.1007/s10909-019-02176-9
https://doi.org/10.1007/s10909-019-02176-9
Autor:
Marc Sanquer, Gregory L. Snider, Jonathan Chisum, Matthew Huebner, Eva Dupont-Ferrier, Alexei O. Orlov, Thomas A. Zirkle, Xavier Jehl, Matthew J. Filmer, Joffrey Rivard
Publikováno v:
Applied Sciences, Vol 10, Iss 8797, p 8797 (2020)
Applied Sciences
Applied Sciences, 2020, 10 (24), pp.8797. ⟨10.3390/app10248797⟩
Applied Sciences
Applied Sciences, 2020, 10 (24), pp.8797. ⟨10.3390/app10248797⟩
Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::738f2975a05f78448ba2547a7ff6af46
https://doi.org/10.3390/app10248797
https://doi.org/10.3390/app10248797
Publikováno v:
Applied Physics Letters. 116:213103
Single-electron tunneling transistors (SETs) and boxes (SEBs) belong to the family of charge-sensitive electronic devices based on the phenomenon of Coulomb blockade. An SEB is a two-terminal device composed of “leaky,” C j, and “non-leaky,”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d2ddb05e6e852124c84d420ed2cb6d6
https://doi.org/10.1063/5.0005425
https://doi.org/10.1063/5.0005425
Publikováno v:
Journal of Applied Physics. 72:82-89
We have demonstrated a stress gettering mechanism in semi‐insulating, copper‐contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca9a0ab4629c56eac94645ae5c60ed54
https://doi.org/10.1063/1.352099
https://doi.org/10.1063/1.352099
Publikováno v:
Journal of Applied Physics. 68:4772-4776
We have observed a very interesting feature in the mid‐infrared region of copper‐doped semi‐insulating liquid encapsulated Czochralski grown GaAs at liquid helium temperature. After gettering copper using backside mechanical damage, the transmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb0ccde0f61b3fad225efd1b9bb0a3b
https://doi.org/10.1063/1.346132
https://doi.org/10.1063/1.346132