Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Thomas A. Rabson"'
Publikováno v:
Integrated Ferroelectrics. 44:125-134
Domain nucleation close to a domain wall and within an unswitched domain of a ferroelectric thin film is analyzed theoretically in terms of the local field, from which a model of ferroelectric polarization switching is developed. The coercive field i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fb052d351b1980f8b76549baa205b02
https://doi.org/10.1080/10584580215143
https://doi.org/10.1080/10584580215143
Publikováno v:
Integrated Ferroelectrics. 41:81-90
Piezoelectricity and surface acoustic wave (SAW) propagation of a LiNbO3/diamond/silicon multilayer structure are reported for the first time. Theoretical calculations predict lithium niobate thin films on diamond/silicon substrates have both high SA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::256d3fdfee6962469c7becd89f0073e5
https://doi.org/10.1080/10584580108012810
https://doi.org/10.1080/10584580108012810
Publikováno v:
Integrated Ferroelectrics. 40:171-180
LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb2c02aef24486eaefbd694f8eefb2e6
https://doi.org/10.1080/10584580108010840
https://doi.org/10.1080/10584580108010840
Publikováno v:
Integrated Ferroelectrics. 25:37-46
Filters operating at high frequencies up to gigahertz are required in telecommunications in order to increase the rate of data transmission. The goal of this research is to produce gigahertz electronical filters with low insertion loss for front-end
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43981d2424ee2147cfb81a04167ab0b
https://doi.org/10.1080/10584589908210158
https://doi.org/10.1080/10584589908210158
Publikováno v:
Integrated Ferroelectrics. 24:75-84
BaTiO3 thin films with (110) preferred orientation are deposited on Si (111) substrates by radio-frequency magnetron sputtering in the temperature range 500–530°C. The crystallinity and microstructure of the films are characterized by X-ray diffra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787f881c24cdec26a7949b8140ebdcfc
https://doi.org/10.1080/10584589908215580
https://doi.org/10.1080/10584589908215580
Publikováno v:
Integrated Ferroelectrics. 18:415-424
Barium titanate (BaTiO3) thin films with high (211) orientation have been prepared on Pt(111)/Si(100) substrates by R. F. magnetron sputtering at a substrate temperature between 550°C and 580°C in an Ar/O2 atmosphere. The I-V curve of a thin film c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1782bd89561c809866212c224367eb71
https://doi.org/10.1080/10584589708221718
https://doi.org/10.1080/10584589708221718
Publikováno v:
Integrated Ferroelectrics. 11:201-211
Deposition of LiNbO3 thin films on R-cut (0112) sapphire by rf magnetron sputtering has been systematically investigated and repeatable epitaxial relationships between LiNbO3 thin film and sapphire substrate were observed. As a result, the effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23aa823ec4afa89774770f21d35d4726
https://doi.org/10.1080/10584589508013592
https://doi.org/10.1080/10584589508013592
Publikováno v:
Integrated Ferroelectrics. 11:221-227
Lithium niobate has a number of attractive piezoelectric and ferroelectric properties that have been exploited for many applications. The main purpose of our work was to grow lithium niobate thin films on silicon substrates and make surface acoustic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef873a3a9a7e276746bc2bc13b5768b7
https://doi.org/10.1080/10584589508013594
https://doi.org/10.1080/10584589508013594
Publikováno v:
Integrated Ferroelectrics. 10:215-222
Lithium Niobate (LiNbO3) is a unique ferroelectric material with a large coercive field and remanent polarization. These properties are essential for reliable ferroelectric memory applications. The switching behavior of Metal-LiNbO3-Silicon capacitor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d72a44c68432e633ebb48e1be594cf1
https://doi.org/10.1080/10584589508012278
https://doi.org/10.1080/10584589508012278
Publikováno v:
Integrated Ferroelectrics. 6:15-22
The characteristics of a field effect transistor with a lithium niobate gate insulator are reported. Shifts in the gate characteristics consistent with polarization switching have been observed. Comparisons with the results of some of the recently pu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781b3bc54ef1892cf553a2b96a511b16
https://doi.org/10.1080/10584589508019350
https://doi.org/10.1080/10584589508019350