Výsledky vyhledávání - "Thomas A. Langdo"

Dislocation dynamics in relaxed graded composition semiconductors

Autor: Gianni Taraschi, Andrew Y. Kim, Matthew T. Currie, Thomas A. Langdo, Eugene A. Fitzgerald, Mayank T. Bulsara

Publikováno v: Materials Science and Engineering: B. 67:53-61

Lattice-mismatched relaxed graded composition layers in the SiGe/Si, InGaAs/GaAs, and InGaP/GaP systems have recently been created with unprecedented high quality due to advances in understanding the impact of epitaxial growth conditions. The key pro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e43e9eed3383b7a20d0a286864036668
https://doi.org/10.1016/s0921-5107(99)00209-3

Zobrazit plný text záznamu

Dislocations in Relaxed SiGe/Si Heterostructures

Autor: Christopher W. Leitz, Mayank T. Bulsara, Eugene A. Fitzgerald, Gianni Taraschi, Matthew T. Currie, Vicky K. Yang, Thomas A. Langdo, S. B. Samavedam

Publikováno v: physica status solidi (a). 171:227-238

Recent advances in the understanding and control of threading dislocations in substantially relaxed SiGe buffer layers on Si are presented. A model for threading dislocation flow in relaxed graded SiGe buffers is used to determine the potential lower

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3756025d32bda00e01f0c1ba18122e2d
https://doi.org/10.1002/(sici)1521-396x(199901)171:1<227::aid-pssa227>3.0.co

Zobrazit plný text záznamu

Embedded package wafer bow elimination techniques

Autor: Gary B. Tepolt, D. Gauthier, Thomas A. Langdo, L. Racz. A. Mueller, Barry Smith, Jeffrey C. Thompson

Publikováno v: 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

We outline several approaches to allow individual die to be encapsulated within a silicon substrate, which we define as a cavity wafer, without causing wafer bow. This technique forms the basis for a novel integrated ultra high density (i-UHD) wafer-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52883469fc6b9a1cd14bb681d0219ae2
https://doi.org/10.1109/ectc.2011.5898491

Zobrazit plný text záznamu

Relaxed silicon-germanium on insulator substrate by layer transfer

Autor: Minjoo L. Lee, Zhiyuan Cheng, Eugene A. Fitzgerald, Gianni Taraschi, Chris Leitz, Matthew T. Currie, Dimitri A. Antoniadis, Thomas A. Langdo, Judy L. Hoyt, Arthur J. Pitera

Publikováno v: Journal of Electronic Materials. 30:L37-L39

The fabrication of 4 in, relaxed Si1−xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1−xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be4c7032fdc9eef8d6ccb2ca0867e91e
https://doi.org/10.1007/s11664-001-0182-0

Zobrazit plný text záznamu

Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Autor: Eugene A. Fitzgerald, Minjoo L. Lee, Gianni Taraschi, Dimitri A. Antoniadis, Matthew T. Currie, Christopher W. Leitz, Thomas A. Langdo, Arthur J. Pitera, Z. Y. Cheng

Publikováno v: Applied Physics Letters. 79:3344-3346

We have fabricated strained Ge channel p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) on Si0.3Ge0.7 virtual substrates. The poor interface between silicon dioxide (SiO2) and the Ge channel was eliminated by capping the stra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b22b5ecbaccde062df33314027bce20
https://doi.org/10.1063/1.1417515

Zobrazit plný text záznamu

Transport and Leakage in Super-Critical Thickness Strained Silicon Directly on Insulator MOSFETs with Strained Si Thickness up to 135 nm

Autor: J.L. Hoyt, Ingvar Åberg, Zhiyuan Cheng, I. Lauer, Anthony J. Lochtefeld, Thomas A. Langdo, D.A. Antoniadis

Publikováno v: 2005 IEEE International SOI Conference Proceedings.

In this work, we study both FD- and PD-SSOI with aggressive T/sub Si/ of up to 135 nm for 14% SSOI (14% Ge equivalent strain). We have demonstrated that mobility in 14% SSOI is independent of the strained Si thickness, even for as grown films 10/spl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32574acbab9522ff0fe13c8c5a4f9e8b
https://doi.org/10.1109/soi.2005.1563521

Zobrazit plný text záznamu

DC and RF characterization of fully depleted strained SOI MOSFETs

Autor: Chenson Chen, Michael Fritze, Thomas A. Langdo, J.G. Fiorenza, C.L. Chen, D.-R. Yost, Matthew T. Currie, C.K. Keast, G. Braithwaite, Christopher W. Leitz, Zhiyuan Cheng, A. Lochtefeld, Peter W. Wyatt, R. Lambert

Publikováno v: 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

The RF characteristics of strained SOI (SSOI) MOSFETs are reported for the first time. Fully depleted n- and p-MOSFETs were fabricated on SOI and SSOI wafers. Higher mobility was measured on the SSOI wafers and SSOI n- and p-MOSFETs showed higher tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64133642b7a80cfaab3072436bad5f5c
https://doi.org/10.1109/soi.2004.1391567

Zobrazit plný text záznamu

Dislocation engineering in strained mos materials

Autor: Carl L. Dohrman, Minjoo Lawrence Lee, Dimitri A. Antoniadis, K.L. Lee, Eugene A. Fitzgerald, David M. Isaacson, B. Yu, Thomas A. Langdo

Publikováno v: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Strain in electronic devices is receiving renewed interest due to the advantageous effects of strain on carrier mobility, and therefore drive current. However, the physics of strain incorporation, by definition, introduces the physics of strain relie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f8fa020ba2d47bde14a29b817390a35
https://doi.org/10.1109/iedm.2005.1609394

Zobrazit plný text záznamu

Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy

Autor: Jong-Ho Lee, Andy Wei, Thomas A. Langdo, Dimitri A. Antoniadis, Gianni Taraschi, Eugene A. Fitzgerald

Publikováno v: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

We propose a new super self-aligned double-gate MOSFET structure to implement "ideal" double-gate CMOS devices. Only one gate mask is used to define both top and bottom gates, so a perfectly aligned gate structure is obtained. Oxidation rate differen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d9327ef777826af343a38f8785585a4
https://doi.org/10.1109/iedm.1999.823849

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání