Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Thomas A. Heuser"'
Autor:
Arash Ahmadivand, Badriyah Alhalaili, Cesar Bartolo-Perez, Daniel Benedikovič, John E. Bowers, Werner Brockherde, Mario Caironi, Adriano Cola, Annalisa Convertino, Marc Currie, Pouya Dianat, Daniel Durini, Canek Fuentes-Hernandez, Soroush Ghandiparsi, Thomas A. Heuser, Bedrich J. Hosticka, M. Saif Islam, Hakan Karaagac, Mustafa Karabiyik, Gabriella Leo, Guo-Qiang Lo, Ahmed S. Mayet, Lisa N. Mcphillips, Ruth A. Miller, Bahram Nabet, Tadao Nagatsuma, Dario Natali, Matthew M. Ombaba, Nezih Pala, Uwe Paschen, Vincenzo Pecunia, Elif Peksu, Anna Persano, Molly Piels, Fabio Quaranta, Peter F. Satterthwaite, Debbie G. Senesky, Hongyun So, Ananth Saran Yalamarthy, Shiyang Zhu
Publikováno v:
Photodetectors ISBN: 9780081027950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5746ebf52d9eda1070d3624bcbbc270f
https://doi.org/10.1016/b978-0-08-102795-0.00017-7
https://doi.org/10.1016/b978-0-08-102795-0.00017-7
Autor:
Ruth A. Miller, Hongyun So, Thomas A. Heuser, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Debbie G. Senesky
Publikováno v:
Photodetectors ISBN: 9780081027950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccfb0bf5b47e5783768efbeac4caf4c
https://doi.org/10.1016/b978-0-08-102795-0.00008-6
https://doi.org/10.1016/b978-0-08-102795-0.00008-6
The survivability of microelectronic devices in ionizing radiation environments drives spacecraft design, capability, mission scope, and cost. This work exploits the periodic nature of many space radiation environments to extend device lifetimes with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4aa5d12853a3789fc7ea986736d710b3
https://doi.org/10.36227/techrxiv.14346839.v2
https://doi.org/10.36227/techrxiv.14346839.v2
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient betavoltaic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baedb606566b2d64f19fd0cbacff6e19
http://arxiv.org/abs/2105.08156
http://arxiv.org/abs/2105.08156
This work proposes a "dynamic biasing" technique and uses on-orbit simulations with experimental testing to demonstrate up to a 16x improvement in total-dose lifetimes for COTS devices without additional shielding or modifications to the chip. Buildi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b19b26522ad06778c589661a39dfeeb1
https://doi.org/10.36227/techrxiv.14346839.v1
https://doi.org/10.36227/techrxiv.14346839.v1
Publikováno v:
Journal of Applied Physics. 131:155701
The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea91eed46d0f198e3ae13974ad66005c
https://doi.org/10.1063/5.0077210
https://doi.org/10.1063/5.0077210
Autor:
Ateeq J. Suria, Xiaoqing Xu, Sambhav R. Jain, Thomas A. Heuser, Hongyun So, Debbie G. Senesky, Minmin Hou
Publikováno v:
Journal of Applied Physics. 122:195102
In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 °C were measured intermittently over a 5 h duration using unpassivated and Al2O3-passivated AlGaN/GaN (with 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054ef4f3a6e843f43418963fa8d2d911
https://doi.org/10.1063/1.5011178
https://doi.org/10.1063/1.5011178
Autor:
Caitlin A. Chapin, Thomas A. Heuser, Ananth Saran Yalamarthy, Ateeq J. Suria, Debbie G. Senesky, Alexandra Bruefach, Hongyun So
Publikováno v:
Applied Physics Letters. 110:253505
In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppressio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c61790ebf761ea20b2dd88885001cd2f
https://doi.org/10.1063/1.4986910
https://doi.org/10.1063/1.4986910