Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thomas Druga"'
Autor:
Anna Sinterhauf, Philip Willke, Hans Hofsäss, Kalobaran Maiti, Martin Wenderoth, Sangeeta Thakur, Steffen Weikert, J. Amani, Thomas Druga, Thomas Kotzott
Publikováno v:
Nano letters. 15(8)
We investigate the structural, electronic, and transport properties of substitutional defects in SiC-graphene by means of scanning tunneling microscopy and magnetotransport experiments. Using ion incorporation via ultralow energy ion implantation, th
Publikováno v:
Nature communications. 6
Electronic transport on a macroscopic scale is described by spatially averaged electric fields and scattering processes summarized in a reduced electron mobility. That this does not capture electronic transport on the atomic scale was realized by Lan
Publikováno v:
Physical Review B. 76
Autor:
Thomas Druga, Hans Hofsäss, Philip Willke, Kalobaran Maiti, S. Weikert, Martin Wenderoth, J. Amani, Sangeeta Thakur
Publikováno v:
Applied Physics Letters. 105:111605
We perform a structural analysis of nitrogen-doped graphene on SiC(0001) prepared by ultra low-energy ion bombardment. Using scanning tunneling microscopy, we show that nitrogen atoms are incorporated almost exclusively as graphitic substitution in t
Publikováno v:
Applied Physics Letters. 103:051601
We present Kelvin probe force microscopy measurements and resistance network simulations of the lateral charge transport across few-layer graphene on the semi-insulating 6H-SiC(0001) surface. After preparation of the SiC crystal by thermal decomposit
Autor:
Philip Willke, JulianA. Amani, Anna Sinterhauf, Sangeeta Thakur, Thomas Kotzott, Thomas Druga, Steffen Weikert, Kalobaran Maiti, Hans Hofsäss, Martin Wenderoth
Publikováno v:
Nano Letters; Aug2015, Vol. 15 Issue 8, p5110-5115, 6p