Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Thomas, Maroutian"'
Autor:
Ali El Boutaybi, Thomas Maroutian, Ludovic Largeau, Nathaniel Findling, Jean‐Blaise Brubach, Rebecca Cervasio, Alban Degezelle, Sylvia Matzen, Laurent Vivien, Pascale Roy, Panagiotis Karamanis, Michel Rérat, Philippe Lecoeur
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract The crystal structure and ferroelectric properties of epitaxial ZrO2 films ranging from 7 to 42 nm thickness grown on La0.67Sr0.33MnO3 buffered (110)‐oriented SrTiO3 substrate are reported. By employing X‐ray diffraction, a tetragonal ph
Externí odkaz:
https://doaj.org/article/3aba3bba44e948e983e0a9933aaf3cad
Autor:
Laurent Boulley, Thomas Maroutian, Paul Goulain, Andrey Babichev, Anton Egorov, Lianhe Li, Edmund Linfield, Raffaele Colombelli, Adel Bousseksou
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015315-015315-6 (2023)
We demonstrate low temperature deposition conditions for vanadium dioxide (VO2) phase change material by pulsed laser deposition, which are compatible with III–V semiconductors heterostructures typically used in optoelectronic applications. The cha
Externí odkaz:
https://doaj.org/article/6c8e363d35ff414594d55440ad9921ba
Autor:
Martin Zahradník, Klára Uhlířová, Thomas Maroutian, Georg Kurij, Guillaume Agnus, Martin Veis, Philippe Lecoeur
Publikováno v:
Materials & Design, Vol 187, Iss , Pp - (2020)
Influence of substrate miscut on magnetization dynamics in SrRuO3 (SRO) thin films was studied. Two films were grown on SrTiO3 substrates with high (∼ 1°) and low (∼ 0.1°) miscut angles, respectively. As expected, high miscut angle leads to sup
Externí odkaz:
https://doaj.org/article/6b6a1e237b6b4235af415dc4f5b802d4
Autor:
Raphaël Salazar, Sara Varotto, Céline Vergnaud, Vincent Garcia, Stéphane Fusil, Julien Chaste, Thomas Maroutian, Alain Marty, Frédéric Bonell, Debora Pierucci, Abdelkarim Ouerghi, François Bertran, Patrick Le Fèvre, Matthieu Jamet, Manuel Bibes, Julien Rault
Publikováno v:
Nano Letters
Nano Letters, In press, ⟨10.1021/acs.nanolett.2c02448⟩
Nano Letters, In press, ⟨10.1021/acs.nanolett.2c02448⟩
International audience; Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc.) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3f42d605685318aa0d59c64e62ce134
https://doi.org/10.1021/acs.nanolett.2c02448
https://doi.org/10.1021/acs.nanolett.2c02448
Autor:
Rebecca Cervasio, Yoann Peperstraete, Thomas Maroutian, Raphaël Haumont, Marine Verseils, Jean-Blaise Brubach, Robert Tétot, Jérôme Creuze, Pascale Roy, Emilie Amzallag
Publikováno v:
The Journal of Physical Chemistry C. 126:12860-12869
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e4921008e4cc53432bd3c3cc064b4e
https://doi.org/10.1021/acs.jpcc.2c03046
https://doi.org/10.1021/acs.jpcc.2c03046
Autor:
Mariarosa Cavallo, Erwan Bossavit, Sylvia Matzen, Thomas Maroutian, Rodolphe Alchaar, Tung Huu Dang, Adrien Khalili, Corentin Dabard, Huichen Zhang, Yoann Prado, Claire Abadie, James K Utterback, Jean Francois Dayen, Mathieu G. Silly, Pavel Dudin, Jose Avila, Emmanuel Lhuillier, Debora Pierucci
Publikováno v:
Advanced Functional Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae2aee9ef2e5f4b2809015168859011
https://doi.org/10.1002/adfm.202300846
https://doi.org/10.1002/adfm.202300846
Autor:
Pauline Dufour, Thomas Maroutian, Maxime Vallet, Kinnary Patel, André Chanthbouala, Charlotte Jacquemont, Lluis Yedra, Vincent Humbert, Florian Godel, Bin Xu, Sergey Prosandeev, Laurent Bellaiche, Mojca Otoničar, Stéphane Fusil, Brahim Dkhil, Vincent Garcia
Publikováno v:
Applied Physics Reviews
Applied Physics Reviews, 2023, 10 (2), pp.021405. ⟨10.1063/5.0143892⟩
Applied Physics Reviews, 2023, 10 (2), pp.021405. ⟨10.1063/5.0143892⟩
International audience; The archetypical antiferroelectric, PbZrO3, is currently attracting a lot of interest, but no consensus can be clearly established on the nature of its ground state as well as on the influence of external stimuli over its phys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62bd45cd9676f84f511f54278feeb4a2
https://doi.org/10.1063/5.0143892
https://doi.org/10.1063/5.0143892
Autor:
Xavier Le Roux, Sylvia Matzen, Samuel Serna, Delphine Marris-Morini, Jianhao Zhang, Eric Cassan, Laurent Vivien, Elena Duran Valdeiglesias, Joan Manel Ramirez, Nicolas Dubreuil, Philippe Lecoeur, Ludovic Largeau, Guillaume Marcaud, Alicia Ruiz-Caridad, Carlos Alonso-Ramos, Thomas Maroutian
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d232830ff72426d333f36d418bf3f044
https://doi.org/10.1109/jstqe.2021.3129533
https://doi.org/10.1109/jstqe.2021.3129533
Autor:
Ali El Boutaybi, Panagiotis Karamanis, Thomas Maroutian, Sylvia Matzen, Laurent Vivien, Philippe Lecoeur, Michel Rérat
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a396c3f118d1eb211e2adf9f5dd42f
https://doi.org/10.1103/physrevb.107.045140
https://doi.org/10.1103/physrevb.107.045140
Publikováno v:
Physical Review Materials. 6
Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for doping and strain engineering to increase the thickness in epitaxial th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b2d08a89aea7b0c7674e941d107f646
https://doi.org/10.1103/physrevmaterials.6.074406
https://doi.org/10.1103/physrevmaterials.6.074406