Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thinh Dang Cong"'
Autor:
Thinh Dang Cong, Trang Hoang
Publikováno v:
Heliyon, Vol 10, Iss 4, Pp e26496- (2024)
An automatic programming tool has become an essential component in virtual fabrication in recent years. This paper aims to propose a methodology of virtual fabrication for semiconductor devices and design a tool called Technology Computer-Aided Desig
Externí odkaz:
https://doaj.org/article/5d9650a35c7e44bd9700dcafc9af93cd
Autor:
Thinh Dang Cong, Trang Hoang
Publikováno v:
Modelling and Simulation in Engineering, Vol 2024 (2024)
Floating-gate transistor lies at the heart of many aspects of semiconductor applications such as neural networks, analog mixed-signal, neuromorphic computing, and especially in nonvolatile memories. The purpose of this paper was to design a high-perf
Externí odkaz:
https://doaj.org/article/2c02fcfefce049d5ae8f1fefa3ee6f4a
Publikováno v:
Ain Shams Engineering Journal, Vol 14, Iss 4, Pp 101917- (2023)
The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor of the 65 nm process. The fabrication process was designed and characterized using the TCAD Silvaco tools. In our work, a detailed flow and the parameters
Externí odkaz:
https://doaj.org/article/5023e4eeaebc412c8eb35bddc6faf8e3
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 6:1191-1198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac202dabae1e06f96397e7650dab2da4
https://doi.org/10.25046/aj0601135
https://doi.org/10.25046/aj0601135
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 6:146-152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b208c728243609a96d683d9e4b8eb97
https://doi.org/10.25046/aj060116
https://doi.org/10.25046/aj060116
Publikováno v:
ISCIT
The floating-gate device has become an established component of all electronic systems, especially Non-volatile memories in recent years. In this paper, the impact of process variation on the threshold voltage of a 180nm floating-gate device is prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470529e3961199bc58e47ad101677773
https://doi.org/10.1109/iscit.2019.8905125
https://doi.org/10.1109/iscit.2019.8905125