Zobrazeno 1 - 10
of 1 977
pro vyhledávání: '"Thin-film transistors (TFTs)"'
Autor:
Yujia Qian, Xishuang Gu, Ting Li, Peixuan Hu, Xiaohan Liu, Junyan Ren, Lingyan Liang, Hongtao Cao
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by envir
Externí odkaz:
https://doaj.org/article/bbb1fa103ff448d6b7a42638ab3afc05
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 919-927 (2024)
A DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explici
Externí odkaz:
https://doaj.org/article/36961c317d644a6d81657b1b02ad70b3
Autor:
Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 502-507 (2024)
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment e
Externí odkaz:
https://doaj.org/article/ab217a3f1a584abe87876197bfa4b30b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 159-164 (2024)
This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O p
Externí odkaz:
https://doaj.org/article/ec66fa3d8b8c4dc88f9d973f9034bcef
Autor:
Wonjun Shin, Ji Ye Lee, Ryun‐Han Koo, Jangsaeng Kim, Jong‐Ho Lee, Sang Yeol Lee, Sung‐Tae Lee
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract The presence of low‐frequency noise (LFN) in amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) is of utmost concern, prompting extensive investigations into the analysis of LFN. However, prior research endeavors have tende
Externí odkaz:
https://doaj.org/article/d5f21a7ab8574cf5b59cd0647d10dbe0
Autor:
Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Publikováno v:
Nanomaterials, Vol 14, Iss 5, p 466 (2024)
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial thr
Externí odkaz:
https://doaj.org/article/5e84f4fc6fef43b4afe2a5659348c1e3
Publikováno v:
Micromachines, Vol 15, Iss 2, p 263 (2024)
Flat panel displays are electronic displays that are thin and lightweight, making them ideal for use in a wide range of applications, from televisions and computer monitors to mobile devices and digital signage. The Thin-Film Transistor (TFT) layer i
Externí odkaz:
https://doaj.org/article/aaab144a780846bcab459f8a6fb0de2c
Publikováno v:
Micromachines, Vol 15, Iss 2, p 225 (2024)
We applied excimer laser annealing (ELA) on indium-zinc oxide (IZO) and IZO/indium-gallium-zinc oxide (IGZO) heterojunction thin-film transistors (TFTs) to improve their electrical characteristics. The IZO and IZO/IGZO heterojunction thin films were
Externí odkaz:
https://doaj.org/article/8594b824a52449ff9cfbd84ec513f2ce
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Akademický článek
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