Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Thilo Scheiper"'
Autor:
Andy Wei, Thomas Feudel, Manfred Horstmann, Michael Raab, Martin Gerhadt, Thilo Scheiper, Rolf Stephan, Jan Hoentschel, Stephan Krugel
Publikováno v:
CICC
We present an overview of partially-depleted silicon-on-insulator (PD-SOI) CMOS transistor technologies for high-performance microprocessors. To achieve a “high performance per watt” figure of merit, transistor technology elements like PD-SOI, st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f7f193345da2bd1c50c9e96ae549b5c
https://doi.org/10.1109/cicc.2009.5280865
https://doi.org/10.1109/cicc.2009.5280865
Autor:
Michael Raab, W. Klix, Thorsten Kammler, D. Greenlaw, Andreas Gehring, Jan Hoentschel, S. Muehle, Tom Herrmann, Manfred Horstmann, Andre Poock, Thilo Scheiper, T. Lingner, Christian Krueger, P. Shi, Rolf Stephan, R. Stenzel, Thomas Feudel, P. Huebler, Maciej Wiatr, Andy Wei, Robert Mulfinger
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Sub-40 nm Lgate asymmetric halo and source/drain extension transistors have been integrated into leading-edge 65 nm and 45 nm PD-SOI CMOS technologies. With optimization, the asymmetric NMOS and PMOS saturation drive currents improve up to 12% and 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe108a62a09d5290e0b7d8c521f3ce44
https://doi.org/10.1109/iedm.2008.4796775
https://doi.org/10.1109/iedm.2008.4796775