Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Thilo Reusch"'
Publikováno v:
The Journal of Physical Chemistry C. 120:10466-10475
The interface properties between Sn-doped In2O3 (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current–voltage analysis in combination transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28eb2e2f81c63a33e099165d79ed44b1
https://doi.org/10.1021/acs.jpcc.6b02567
https://doi.org/10.1021/acs.jpcc.6b02567
Publikováno v:
Organic Electronics. 32:27-33
Efficient light extraction for organic light emitting diodes (OLED) using scalable processes and low-cost materials are important prerequisites for the future commercialization of OLED lighting devices. The light-extraction technology exhibited in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ad5d9546e084afc548ccf5486ce8aae
https://doi.org/10.1016/j.orgel.2016.02.004
https://doi.org/10.1016/j.orgel.2016.02.004
Publikováno v:
Organic Electronics. 14:1939-1945
The authors investigated passive cooling of large-area organic light-emitting diodes (OLEDs) with special focus on convective cooling. Electro-optical and thermal behaviour of large-area OLED devices are therefore modelled using finite element method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f062839ed25eb241c13e44b0b74f7b7f
https://doi.org/10.1016/j.orgel.2013.04.023
https://doi.org/10.1016/j.orgel.2013.04.023
Autor:
Sunhee Lee, Thilo Reusch, W. C. T. Lee, Gerhard Klimeck, Andreas Fuhrer, Hoon Ryu, Michelle Y. Simmons, Suddhasatta Mahapatra, Bent Weber, D.L. Thompson, Lloyd C. L. Hollenberg
Publikováno v:
Science. 335:64-67
Wiring Up Silicon Surfaces One of the challenges in downsizing electronic circuits is maintaining low resistivity of wires, because shrinking their diameter to near atomic dimensions increases interface effects and can decrease the effectiveness of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04a4894f0fbee4f77ca8668ba753d891
https://doi.org/10.1126/science.1214319
https://doi.org/10.1126/science.1214319
Autor:
M. Füchsle, Andreas Fuhrer, Giordano Scappucci, Thilo Reusch, D.L. Thompson, F. J. Rueß, Michelle Y. Simmons, W. Pok
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1006-1009
We study the low temperature electrical characteristics of planar, highly phosphorus-doped nanodots. The dots are defined by lithographically patterning an atomically flat, hydrogenated Si(1 0 0):H surface using a scanning-tunneling-microscope (STM),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16643cc5bc3d668f72d7aceb508f15a9
https://doi.org/10.1016/j.physe.2007.08.057
https://doi.org/10.1016/j.physe.2007.08.057
Autor:
Oliver Warschkow, Thilo Reusch, David R. McKenzie, Michelle Y. Simmons, Marian W. Radny, Nigel A. Marks, Phillip V. Smith, Neil J. Curson
Publikováno v:
Surface Science. 601:4036-4040
We have studied single Si dangling bonds on the Si(0 0 1) surface using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. The Si dangling bonds are created by the chemisorption of single hydrogen atoms forming a S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77d8ef0b6e33618cc587d1e2cc93a2f1
https://doi.org/10.1016/j.susc.2007.04.072
https://doi.org/10.1016/j.susc.2007.04.072
Autor:
M. Mitic, M. Füchsle, Giordano Scappucci, Thilo Reusch, Michelle Y. Simmons, W. Pok, F. J. Rueß, D.L. Thompson
Publikováno v:
Journal of Scanning Probe Microscopy. 2:10-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c83f5632b15f08755161fab134fe64e
https://doi.org/10.1166/jspm.2007.005
https://doi.org/10.1166/jspm.2007.005
Autor:
Neil J. Curson, Michelle Y. Simmons, Nigel A. Marks, Thilo Reusch, Marian W. Radny, Oliver Warschkow, Phillip V. Smith, David R. McKenzie
Publikováno v:
The Journal of Physical Chemistry C. 111:6428-6433
Using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations, we show that the structure of isolated Si dangling bonds on the Si(001) surface is critically influenced by the doping of the silicon substrate. Substitutiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a997ba630d6e0d1b95f685777aa13afe
https://doi.org/10.1021/jp068834c
https://doi.org/10.1021/jp068834c
Autor:
Thilo Reusch, Kuan Eng Johnson Goh, Giordano Scappucci, Alex R. Hamilton, W. Pok, F. J. Rueß, Michelle Y. Simmons, L. Oberbeck, Matthew J. Butcher
Publikováno v:
Small. 3:563-567
was developed, similar to opticallithography found in the semiconductor industry and elec-tron-beam lithography used in the research environment.The basic concept involves passivating the Si surface withhydrogen atoms, thus forming an atomic monolaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d704e896f3184d874a3e728e9a03b059
https://doi.org/10.1002/smll.200600680
https://doi.org/10.1002/smll.200600680
Publikováno v:
IEEE Transactions On Nanotechnology. 6:213-217
We report on the ability to fabricate arrays of planar, nanoscale, highly doped phosphorus dots in silicon separated by source and drain electrodes using scanning tunneling microscope lithography. We correlate ex situ electrical measurements with sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4693a483161ed171987a1bc67af31fd
https://doi.org/10.1109/tnano.2007.891823
https://doi.org/10.1109/tnano.2007.891823