Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thilo Notz"'
Autor:
Thilo Notz
Publikováno v:
Communications on Pure and Applied Mathematics
We introduce a hyperbolic equation that describes the motion of closed hypersurfaces in a Riemannian manifold with surface tension and inner pressure as driving forces. In the case of spherical surfaces this equation can be considered as an idealized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8805a24a33d7b54b68f7e8d2abf708e6
https://doi.org/10.1002/cpa.21436
https://doi.org/10.1002/cpa.21436
Publikováno v:
ECS Transactions. 33:127-135
The development of nanopore morphology at the Si/electrolyte contact is considered during the anodic oxidation of n-type silicon in fluoride containing solutions. The applied morphological model is characterized by stress in silicon and cracks and na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3366dbadecab0d58b33bf109741366d
https://doi.org/10.1149/1.3553164
https://doi.org/10.1149/1.3553164
Publikováno v:
physica status solidi c. 8:1734-1738
The oxide structure formation process at the Si/electrolyte contact is considered during the anodic oxidation of n-type silicon in fluoride containing solution. The morphological model is characterized by stress, cracks, nanopores and assumes two typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c62c3df215ea2b0ed2ee235a6af18a
https://doi.org/10.1002/pssc.201000030
https://doi.org/10.1002/pssc.201000030
Publikováno v:
physica status solidi c. 6:1639-1643
A cellular automata is introduced to model the locally resolved oxide thickness, the stress, and the etching rate dynamics at the silicon electrolyte contact along a macroscopically long line (1 mm). Short- and long-range interaction mechanisms are c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08790198e13f40aa55a6800e70f639c2
https://doi.org/10.1002/pssc.200881028
https://doi.org/10.1002/pssc.200881028
Publikováno v:
ECS Transactions. 16:173-180
A morphological model is given for the anodic oxidation of n-type silicon in fluoride containing solution in a potentiostatic arrangement. An earlier introduced macroscopic version of the model is extended from temporal to spatio-temporal resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6263b07a812ea586e64b9280b9c046a2
https://doi.org/10.1149/1.2982553
https://doi.org/10.1149/1.2982553
Publikováno v:
ECS Meeting Abstracts. :1339-1339
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8e51db57238851ccb7a461f6bdada0
https://doi.org/10.1149/ma2010-02/18/1339
https://doi.org/10.1149/ma2010-02/18/1339