Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Thilo Hepp"'
Autor:
Oliver Maßmeyer, Johannes Haust, Thilo Hepp, Robin Günkel, Johannes Glowatzki, Carsten von Hänisch, Wolfgang Stolz, Kerstin Volz
Publikováno v:
ACS Omega, Vol 6, Iss 42, Pp 28229-28241 (2021)
Externí odkaz:
https://doaj.org/article/0c1fcfc9bd3844e98edc9421ca7b7246
Autor:
Thilo Hepp, Jannik Lehr, Robin Günkel, Oliver Maßmeyer, Johannes Glowatzki, Antje Ruiz Perez, Stefan Reinhard, Wolfgang Stolz, Kerstin Volz
Publikováno v:
Electronics Letters, Vol 58, Iss 2, Pp 70-72 (2022)
Abstract The ongoing pursuit for laser device emitting in the near‐infrared spectral region on GaAs substrates has led to various material systems and device concepts. Alloys containing dilute amounts of Bismuth are promising candidates due to the
Externí odkaz:
https://doaj.org/article/248f89404cdf4d0a944db65d3dae696d
Autor:
Robin Günkel, Kerstin Volz, Thilo Hepp, Johannes Glowatzki, Oliver Maßmeyer, Carsten von Hänisch, Johannes Haust, Wolfgang Stolz
Publikováno v:
ACS Omega, Vol 6, Iss 42, Pp 28229-28241 (2021)
ACS Omega
ACS Omega
Tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) are getting more and more established as group V precursors for the growth of V/III semiconductors by metal organic vapor phase epitaxy (MOVPE). Due to this development, the thermal decompos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7da229575a64b291db67368dd56e28e1
https://doaj.org/article/0c1fcfc9bd3844e98edc9421ca7b7246
https://doaj.org/article/0c1fcfc9bd3844e98edc9421ca7b7246
Autor:
Dominic A. Duffy, Igor P. Marko, Christian Fuchs, Thilo Hepp, Jannik Lehr, Kerstin Volz, Wolfgang Stolz, Stephen J. Sweeney
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5484ecfd8ca9f5b6581d74a43d6063
https://doi.org/10.23919/islc52947.2022.9943462
https://doi.org/10.23919/islc52947.2022.9943462
Autor:
Oliver Maßmeyer, Robin Günkel, S. Reinhard, Wolfgang Stolz, Jannik Lehr, Antje Ruiz Perez, Kerstin Volz, Thilo Hepp, Johannes Glowatzki
Publikováno v:
Electronics Letters, Vol 58, Iss 2, Pp 70-72 (2022)
The ongoing pursuit for laser device emitting in the near‐infrared spectral region on GaAs substrates has led to various material systems and device concepts. Alloys containing dilute amounts of Bismuth are promising candidates due to the already s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c91adaf2edb9b429b1e2b9c87930eef
https://doi.org/10.1049/ell2.12353
https://doi.org/10.1049/ell2.12353
Autor:
Wolfgang Stolz, Carsten von Hänisch, Marcel Köster, Ebunoluwa Odofin, Thilo Hepp, Kerstin Volz, Johannes Glowatzki, Oliver Maßmeyer
Publikováno v:
Organometallics. 39:1772-1781
III/V semiconductors containing small amounts of nitrogen (dilute nitrides) are promising for applications such as lasers and solar cells. Metal–organic vapor-phase epitaxy (MOVPE) is a widely used...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e7cbb823d8519189ee06194bc3fa9c7
https://doi.org/10.1021/acs.organomet.0c00078
https://doi.org/10.1021/acs.organomet.0c00078
Autor:
Stephen J. Sweeney, Zoe C. M. Davidson, Judy M Rorison, Kerstin Volz, Christopher A. Broderick, Thilo Hepp
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7e0190994cc0e0a4811149b7fc0e87
https://doi.org/10.1109/islc51662.2021.9615882
https://doi.org/10.1109/islc51662.2021.9615882
Publikováno v:
Journal of Crystal Growth. 463:151-155
Dilute bismide containing materials can play an important role in addressing the issue of finding new highly efficient lasers for telecommunications as well as sensing applications. In the last several years a growing body of literature has emerged,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d21490e4b6c489690a31e4156dc130b8
https://doi.org/10.1016/j.jcrysgro.2017.02.021
https://doi.org/10.1016/j.jcrysgro.2017.02.021
Publikováno v:
Ultramicroscopy
Scanning transmission electron microscopy (STEM) is a suitable method for the quantitative characterization of nanomaterials. For an absolute composition determination on an atomic scale, the thickness of the specimen has to be known locally with hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89f6c1052139062c904000ec766caa3b
Publikováno v:
Applied Physics Letters. 118:052103
The realization of efficient semiconductor lasers on GaAs substrates operating at 1.55 μm and beyond remains a technological challenge. As a potential solution, epitaxial heterostructures with type-II band alignment are currently discussed as an act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af926462cfe0f41f074b87f4bc16635
https://doi.org/10.1063/5.0036073
https://doi.org/10.1063/5.0036073