Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thijs Hollink"'
Autor:
Emily Gallagher, Stephane Lariviere, Friso Wittebrood, Ming Mao, Philippe Leray, Frederic Lazzarino, Mircea Dusa, Danny Wan, M. Gallagher, Joost Bekaert, Sandip Halder, Arindam Mallik, V. M. Blanco Carballo, Sara Paolillo, Darko Trivkovic, Ling Ee Tan, Thijs Hollink, Eric Hendrickx, B. Kutrzeba Kotowska, R. H. Kim, Yasser Sherazi, P. Rusu, Werner Gillijns, Timon Fliervoet, G. McIntyre, Ivan Ciofi, Rogier Baert
Publikováno v:
SPIE Proceedings.
This paper summarizes findings on the iN7 platform (foundry N5 equivalent) for single exposure EUV (SE EUV) of M1 and M2 BEOL layers. Logic structures within these layers have been measured after litho and after etch, and variability was characterize
Autor:
J. van Dijk, A. Van Dijk, K. Ricken, John McNamara, Vidya Vaenkatesan, Paul Colsters, W. Liebregts, Rik Hoefnagels, J. Hageman, Guido Schiffelers, R. Pellens, L. de Winter, Rik Jonckheere, R. de Kruif, Natalia Davydova, Thijs Hollink, E. van Setten, R. Kottumakulal
Publikováno v:
SPIE Proceedings.
EUV sources emit a broad band DUV Out-of-Band (OOB) light, in particular, in the wavelength range 100-400 nm. This can cause additional exposure of EUV resists made that are based on a ArF/KrF resist platform. This DUV light is partially suppressed w
Autor:
Kars Zeger Troost, Keith Gronlund, Paul Gräupner, Oliver Schumann, Stephen Hsu, Paul van Adrichem, Jörg Zimmermann, Hua-yu Liu, Christoph Hennerkes, Steven G. Hansen, Koen van Ingen Schenau, Howell Rafael C, Frank A. J. M. Driessen, Thijs Hollink, Kaiyu Yang, Xiaofeng Liu
Publikováno v:
SPIE Proceedings.
In this paper we introduce new source-mask co-optimization (SMO) capabilities for EUV with specific support of the details of imaging with NXE:33×0 scanners. New algorithms have been developed that fully exploit the adjustability of the light distri
Autor:
Jo Finders, Mark Eurlings, Natalia Davydova, Thijs Hollink, Mircea Dusa, Stuart Young, Mark O'Mahony, Koen van Ingen Schenau, Friso Wittebrood, Kees Feenstra, Eelco van Setten
Publikováno v:
SPIE Proceedings.
With the introduction of the NXE:3100 NA=0.25 exposure system a big step has been made to get EUV lithography ready for High Volume Manufacturing. Over the last year, 6 exposure systems have been shipped to various customers around the world, active
Autor:
Peter Engblom, Jo Finders, Toralf Gruner, Marcel Hendrikus Maria Beems, Jan Mulkens, Youping Zhang, Hans Bakker, Thijs Hollink, Rob Willekers, Alena Andryzhyieuskaya, Angelique Nachtwein, Frank Staals
Publikováno v:
SPIE Proceedings.
In this paper we describe the basic principle of FlexWave, a new high resolution wavefront manipulator, and discuss experimental data on imaging, focus and overlay. For this we integrated the FlexWave module in a 1.35 NA immersion scanner. With FlexW
Autor:
Thijs Hollink, Jo Finders
Publikováno v:
27th European Mask and Lithography Conference.
In this paper we perform a fundamental study on the impact of mask absorber in ArF immersions lithography: the mask 3D effects. From simulations and analysis of diffraction coefficients we could identify a range of relevant features and imaging and p