Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Thierry Coffi Herve Yao"'
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Novel design approach for LDMOS device operating at voltages exceeding 100V is demonstrated and architecture to address all aspects of critical electric field is described. As a bonus, no changes in doping conditions required to achieve the device ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f006fad7b5fc85674c42bd792922a198
https://doi.org/10.1109/ispsd.2018.8393664
https://doi.org/10.1109/ispsd.2018.8393664
Autor:
Thierry Coffi Herve Yao, Moshe Agam, Ladislav Seliga, Jaroslav Pjencak, Agajan Suwhanov, Dusan Prejda
Publikováno v:
ESSDERC
Integration of isolated LDMOS transistors in smart power process is subjected to bipolar parasitics due to multi layers constructions that are needed for high voltage operation. These parasitics need to be minimized to assure proper circuit functiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e665ff386ecb4bef2a642d4b8573c1
https://doi.org/10.1109/essderc.2016.7599646
https://doi.org/10.1109/essderc.2016.7599646
Autor:
Roger Young, Santosh Menon, Peter McGrath, Moshe Agam, Bladimiro Ruiz, Peter Cosmin, Kirk Rolofson, Brian Baylis, Thierry Coffi Herve Yao, Eric Ameele
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This paper discuss the challenges of the integration of non volatile memory array in base line CMOS technology. Process modules of Oxide-Nitride-Oxide (ONO) and floating poly are reviewed with specific examples. This integration work resulted in a su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f80f86ee0015afa0b594ba962a1e5d7
https://doi.org/10.1109/asmc.2015.7164485
https://doi.org/10.1109/asmc.2015.7164485
Autor:
Thierry Coffi Herve Yao, Yutaka Ota, Agajan Suwhanov, Tracy Myers, Sallie Hose, Matt Comard, Moshe Agam
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
This paper presents the challenges of integrating 70V and 45V lateral DMOS transistor modules into a 0.18um base line process. This integration is achieved with minimal impact on baseline process and circuit IP's. Multi-epitaxial stack and Deep Trenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ccee166aa5756b683866391a3b7bc4
https://doi.org/10.1109/asmc.2014.6846954
https://doi.org/10.1109/asmc.2014.6846954