Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Thierry Chassagne"'
Autor:
Catherine Moisson, Sylvain Monnoye, Adrien Michon, Marcin Zielinski, Hugues Mank, Marc Portail, Thierry Chassagne
Publikováno v:
Materials Science Forum. 924:306-309
First objective of present contribution is to supply a compact description of two thickness-dependent characteristics of state of the art as-grown 3C-SiC/Si templates: structural quality and surface morphology. Second objective is to point out the be
Autor:
Marcin Zielinski, Sylvie Contreras, Leszek Konczewicz, J. Ben Messaoud, Thierry Chassagne, Tianlin Wang, Sandrine Juillaguet, Hervé Peyre, Roxana Arvinte
Publikováno v:
Materials Science Forum. 897:275-278
Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.
Autor:
Marc Portail, Adrien Michon, Pawel Kwasnicki, Marcin Zielinski, Sylvie Contreras, Thierry Chassagne, Hervé Peyre, Sandrine Juillaguet, Leszek Konczewicz, Roxana Arvinte
Publikováno v:
ICSCRM
ICSCRM, Oct 2015, Giardini Naxos, France. pp.137-142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
ICSCRM, Oct 2015, Giardini Naxos, France. pp.137-142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditi
Autor:
Marc Portail, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Rami Khazaka, Jean-François Michaud
Publikováno v:
Materials Science Forum. 858:723-728
The aim of this paper is to review the recent developments conducted for the achievement of 3C-SiC‑based heterostructures compatible with MEMS applications. Indeed, the research activities engaged since years permitted to demonstrate that the defec
Autor:
Michael Krieger, Thierry Chassagne, Marcin Zielinski, Marilena Vivona, Alexandra Gkanatsiou, Fabrizio Roccaforte, Tomasz Sledziewski, Patrick Fiorenza
Publikováno v:
Materials science forum 858 (2016): 663–666. doi:10.4028/www.scientific.net/MSF.858.663
info:cnr-pdr/source/autori:M. Vivona 1, P. Fiorenza 1, T. Sledziewski 2, A. Gkanatsiou 3, M. Krieger 2, T. Chassagne 4, M. Zielinski 4, F. Roccaforte 1/titolo:Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers/doi:10.4028%2Fwww.scientific.net%2FMSF.858.663/rivista:Materials science forum/anno:2016/pagina_da:663/pagina_a:666/intervallo_pagine:663–666/volume:858
info:cnr-pdr/source/autori:M. Vivona 1, P. Fiorenza 1, T. Sledziewski 2, A. Gkanatsiou 3, M. Krieger 2, T. Chassagne 4, M. Zielinski 4, F. Roccaforte 1/titolo:Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers/doi:10.4028%2Fwww.scientific.net%2FMSF.858.663/rivista:Materials science forum/anno:2016/pagina_da:663/pagina_a:666/intervallo_pagine:663–666/volume:858
In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS c
Autor:
Marc Portail, Daniel Alquier, Philippe Vennéguès, Marcin Zielinski, Rami Khazaka, Thierry Chassagne, Jean-François Michaud
Publikováno v:
Materials Science Forum. :978-981
We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si (001) epilayers. It is shown that the pressure plays a major role on the final quality of the films, with two d
Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers
Autor:
Monique Teissiere, Adrien Michon, Stéphane Vézian, Thierry Chassagne, Roy Dagher, Marc Portail, Yvon Cordier, Rami Khazaka, Marcin Zielinski
Publikováno v:
Materials Science Forum. :1003-1006
Structural investigations of Si quantum dots (QDs) grown by CVD on two different heterostructures: AlN/Si (111) and 3C-SiC/Si (100) are conducted. The Si QDs have been grown using silane as precursor, diluted in hydrogen, at fixed temperature and pre
Autor:
Marc Portail, Pawel Kwasnicki, Marcin Zielinski, Thierry Chassagne, Sandrine Juillaguet, Adrien Michon, Roxana Arvinte, Hervé Peyre
Publikováno v:
Materials Science Forum. :149-152
An exhaustive experimental study of the influence of C/Si ratio on voluntary incorporation of nitrogen (N) and aluminum (Al) in 4H-SiC thin films is presented. The films were grown by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reac
Autor:
Marc Portail, Thierry Chassagne, M. Teisseire, Adrien Michon, Stéphane Vézian, Marcin Zielinski
Publikováno v:
Journal of Crystal Growth. 404:157-163
We report on the formation of Si dots on SiC surfaces, using chemical vapor deposition technique. Small nanometric objects, with lateral sizes and heights down to 10 and 4 nm respectively, can be obtained, letting expect quantum confinement in the fo
Autor:
S. Di Franco, C. Bongiorno, Lukas K. Swanson, Thierry Chassagne, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte, A. Frazzetto, Marilena Vivona, Simona Lorenti
Publikováno v:
Materials Science Forum. 806:143-147
In this paper a comparative study of the impact of N2O and POCl3 annealing on the SiO2/SiC system is presented, combining nanoscale electrical characterization of SiC surface doping by scanning spreading resistance microscopy (SSRM) and scanning capa