Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates

Autor: Catherine Moisson, Sylvain Monnoye, Adrien Michon, Marcin Zielinski, Hugues Mank, Marc Portail, Thierry Chassagne

Publikováno v: Materials Science Forum. 924:306-309

First objective of present contribution is to supply a compact description of two thickness-dependent characteristics of state of the art as-grown 3C-SiC/Si templates: structural quality and surface morphology. Second objective is to point out the be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa39b3e2b5977475e9bbc75fd3a0008a
https://doi.org/10.4028/www.scientific.net/msf.924.306

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Autor: Marc Portail, Adrien Michon, Pawel Kwasnicki, Marcin Zielinski, Sylvie Contreras, Thierry Chassagne, Hervé Peyre, Sandrine Juillaguet, Leszek Konczewicz, Roxana Arvinte

Publikováno v: ICSCRM
ICSCRM, Oct 2015, Giardini Naxos, France. pp.137-142, ⟨10.4028/www.scientific.net/MSF.858.137⟩

Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92e3dd50510feaeeab09d0a912e30267
https://doi.org/10.4028/www.scientific.net/msf.858.137

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

Autor: Michael Krieger, Thierry Chassagne, Marcin Zielinski, Marilena Vivona, Alexandra Gkanatsiou, Fabrizio Roccaforte, Tomasz Sledziewski, Patrick Fiorenza

Publikováno v: Materials science forum 858 (2016): 663–666. doi:10.4028/www.scientific.net/MSF.858.663
info:cnr-pdr/source/autori:M. Vivona 1, P. Fiorenza 1, T. Sledziewski 2, A. Gkanatsiou 3, M. Krieger 2, T. Chassagne 4, M. Zielinski 4, F. Roccaforte 1/titolo:Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers/doi:10.4028%2Fwww.scientific.net%2FMSF.858.663/rivista:Materials science forum/anno:2016/pagina_da:663/pagina_a:666/intervallo_pagine:663–666/volume:858

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23593010a960a6166a5b516675f0ca77
https://doi.org/10.4028/www.scientific.net/msf.858.663

Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers

Autor: Monique Teissiere, Adrien Michon, Stéphane Vézian, Thierry Chassagne, Roy Dagher, Marc Portail, Yvon Cordier, Rami Khazaka, Marcin Zielinski

Publikováno v: Materials Science Forum. :1003-1006

Structural investigations of Si quantum dots (QDs) grown by CVD on two different heterostructures: AlN/Si (111) and 3C-SiC/Si (100) are conducted. The Si QDs have been grown using silane as precursor, diluted in hydrogen, at fixed temperature and pre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ec67be0512ca352fa910cc54e86e136
https://doi.org/10.4028/www.scientific.net/msf.821-823.1003

Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers

Autor: Marc Portail, Thierry Chassagne, Jaweb Ben Messaoud, Jean-François Michaud, Marcin Zielinski, Daniel Alquier

Publikováno v: International Conference on Silicon Carbide and Related Materials
International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington, United States. pp.318-321, ⟨10.4028/www.scientific.net/MSF.924.318⟩

The silicon carbide cubic polytype (3C-SiC) is perfectly appropriate to fabricate microelectromechanical systems. However, for such applications, the stress can largely influence both the fabrication of 3C‑SiC‑based microsystems and their related

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76d31eaa1e09462c377b971902d7d46b
https://hal.archives-ouvertes.fr/hal-02017420