Výsledky vyhledávání - "Thierry Bouchet"

Integrated GaN ICs, development and performance

Autor: Thierry Bouchet, Dominique Bergogne, Johan Delaine, Guillaume Regis, Frederic Rothan, Venceslass Rat

Publikováno v: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).

This paper explores the possibility to achieve an integrated circuit with GaN transistors for power electronics applications. GaN provides only N type transistors. Power transistors are presented with the layout and standard useful characterization r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50640d307efeed9961ea9e87d75ca6ec
https://doi.org/10.23919/epe.2019.8915151

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Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

Autor: Frank Torregrosa, Thierry Bouchet, Stéphane Morata

Publikováno v: Materials Science Forum. :449-452

This paper presents a new simple hand using and fast simulator for ion implantation in 4H-SiC substrates developed by IBS for ESCAPEE European project. The modeling is divided in two parts: Empirical Depth Profile Simulator (EDPS) and Activation/Elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5d2bc940eb7ade0e0385edcd1af4319d
https://doi.org/10.4028/www.scientific.net/msf.615-617.449

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Ocean Thermal Energy Conversion: Solutions Studied

Autor: Thierry Bouchet, Cédric Auvray, Brice Hermant, Julian Berrou, Virginie Lelarge, Aurélien Bouhier

Publikováno v: Marine Renewable Energy Handbook

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9b7a01c737c99886018ca8d54ec50039
https://doi.org/10.1002/9781118603185.ch13

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A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Autor: Gontran Pâques, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante, Sigo Scharnholz, Pierre Brosselard, E. Spahn, Mihai Lazar, Thierry Bouchet

Publikováno v: European Conference on Silion Carbide and Related Materials (ECSCRM 2004)
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Scopus-Elsevier

International audience; Today, at ISL, there are pulsed power applications under investigation which handle electric energies up to 10 MJ using switching elements as sparc gaps or high power semiconductors based on silicon [1]. Since silicon based te

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8be8ac6f3e857cab9c2cd305e40f52d8
https://hal.archives-ouvertes.fr/hal-02953080/document

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