Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Thiago H. Both"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 459-465 (2022)
In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise. We derived analytical formulations for modeling the impact o
Externí odkaz:
https://doaj.org/article/9a5f98abc5b74578b554557d070039d5
Autor:
Caroline P. Garcia, Thiago H. Both
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3ebbbe48e8cb5d6ade6e8f09924dca
https://doi.org/10.1109/sbmicro55822.2022.9881046
https://doi.org/10.1109/sbmicro55822.2022.9881046
Autor:
Dragica Vasileska, Alan Carlos Junior Rossetto, Thiago H. Both, Gilson Wirth, Vinícius Valduga de Almeida Camargo
Publikováno v:
Journal of Computational Electronics. 19:648-657
In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a300497e4b3ab7a9d6bdaca5e277d61e
https://doi.org/10.1007/s10825-020-01478-6
https://doi.org/10.1007/s10825-020-01478-6
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
Stochastic timing variations are a major concern in nanometric CMOS logic gates. Addressing the time-zero fluctuations due to variability of physical dimensions and doping profiles, which remain static over time, as well as the time-dependent fluctua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c248cfee179a71bf2d46b0e61a2b8640
https://doi.org/10.1109/sbmicro50945.2021.9585760
https://doi.org/10.1109/sbmicro50945.2021.9585760
Autor:
Andries J. Scholten, Gilson Wirth, Thiago H. Both, Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 66:3521-3526
In this paper, we propose a novel compact statistical model for the low-frequency noise (LFN) of MOS devices with halo implants. The compact model is suited for the incorporation in modern models, such as BSIM, PSP, and EKV, and can be used to predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe6619d7b5bd411451457e312a2e2b3a
https://doi.org/10.1109/ted.2019.2924819
https://doi.org/10.1109/ted.2019.2924819
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
We discuss how charge trapping produces random telegraph noise (RTN) and low-frequency noise (1/f noise), working towards unified statistical modeling and parameter extraction. Modeling is based on discrete device physics quantities, which cause vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29e5127b3ac5f982c3a1b90719d317e9
https://doi.org/10.1109/laedc51812.2021.9437944
https://doi.org/10.1109/laedc51812.2021.9437944
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
We review and critically discuss the unified statistical modeling of charge trapping in the context of 1/f noise, RTN and BTI. The focus is on circuit (electrical) level models to support circuit designers. Modeling is based on discrete device physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592a1a4774942b23bff0d2bafefabdc8
https://doi.org/10.1109/edtm50988.2021.9421005
https://doi.org/10.1109/edtm50988.2021.9421005
Autor:
Leomar S. da Rosa, Henrique Kessler, Plinio Finkenauer, Thiago H. Both, Vinícius Valduga de Almeida Camargo
Publikováno v:
ISCAS
This paper presents a study comparing complex gates that use Series-Parallel and Non-Series-Parallel associations, including the time-zero variability and the BTI impact. A comparison of 53 logical functions was performed, showing that the reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e585393855a2f0f4b9385d30c3a564
https://doi.org/10.1109/iscas45731.2020.9180594
https://doi.org/10.1109/iscas45731.2020.9180594
Autor:
Jeroen Croon, Gilson Wirth, Thiago H. Both, Adrie Zegers-van Duijnhoven, Hans Tuinhout, Mauricio Banaszeski da Silva, Andries J. Scholten
Publikováno v:
Noise in Nanoscale Semiconductor Devices ISBN: 9783030374990
With the scaling of transistor area and the introduction of high-k materials, the noise corner frequency—i.e., the frequency up to which flicker noise dominates over thermal or shot noise—is increased. This makes low-frequency noise (LFN) the dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6655368f52ccd27177debb3d8464f3b6
https://doi.org/10.1007/978-3-030-37500-3_15
https://doi.org/10.1007/978-3-030-37500-3_15
Publikováno v:
Journal of Electronic Testing. 34:735-747
Ionizing radiation degrades the electrical characteristics of MOS devices, reducing their reliability, performance, and lifetime; therefore, hardening techniques are required for the proper functioning of those devices when exposed to harsh environme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c9465e3b2d1feaf1ffee6ae56cfb48
https://doi.org/10.1007/s10836-018-5760-7
https://doi.org/10.1007/s10836-018-5760-7