Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Thi Ri Mya Kywe"'
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents the design and measurement of a two-stage, 2 - 20 GHz GaN MMIC power amplifier fabricated on 100µm silicon carbide using Qorvo's QGaN15 released process. A non-uniform distributed power amplifier architecture with a decade bandwi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a696d3df9f1a36667b7e340c21b10c20
https://doi.org/10.1109/ims30576.2020.9223951
https://doi.org/10.1109/ims30576.2020.9223951
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents the design and measurement of a two-stage, 2 - 20 GHz GaN MMIC power amplifier fabricated on 100 µm silicon carbide using Qorvo's QGaN15 released process. A two-stage non-uniform distributed power amplifier having decade bandwidt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b879a9f30fe95228a6fce15f3205d2
https://doi.org/10.1109/ims30576.2020.9223886
https://doi.org/10.1109/ims30576.2020.9223886
Publikováno v:
BCICTS
This paper presents a three-stage Ka-band Doherty power amplifier fabricated using 0.15 μm GaN-on-SiC HEMT technology. Peak-power greater than 8-watts, 30 dB of small-signal gain, and over 20% of PAE at 6 dB output back-off has been achieved for 27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5fbe23e6e07acd0df0fe1250a6aefa9
https://doi.org/10.1109/bcicts45179.2019.8972750
https://doi.org/10.1109/bcicts45179.2019.8972750
Publikováno v:
BCICTS
This paper presents single and dual output 40 W Ka-Band GaN MMIC PAs fabricated on $\mathbf{50} \ \mu \text{m}$ SiC using Qorvo's QGaN15 released process. The single output PA produces approximately 40 W of output power over the 27.5 - 29.5 GHz band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5161cf1a3b00df3d665ff16e8957f16
https://doi.org/10.1109/bcicts.2018.8551075
https://doi.org/10.1109/bcicts.2018.8551075
Publikováno v:
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd95f575a0020c8a226babb70bf9b46b
https://doi.org/10.1109/csics.2017.8240452
https://doi.org/10.1109/csics.2017.8240452