Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Thermal TCAD simulations"'
Publikováno v:
2021 IEEE Microelectronics Design & Test Symposium (MDTS).
Many IC thermal simulations use only a small volume due to machine/EDA tool constraints. This work presents a thermal TCAD simulation methodology on a large-scale 7nm circuit using available thermal TCAD tools. The circuit model is based on a 3 x 3 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c29e5bc85fe323f86c4a9925dcc98af2
https://doi.org/10.1109/mdts52103.2021.9476141
https://doi.org/10.1109/mdts52103.2021.9476141
Conference
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Autor:
D'Esposito, Rosario
Ce travail de thèse présente une étude concernant la caractérisation des effets électrothermiques dans les transistors bipolaires à hétérojonction (HBT) en SiGe. Lors de ces travaux, deux procédés technologiques BiCMOS à l’état de l’a
Externí odkaz:
http://www.theses.fr/2016BORD0147/document
On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 360 Issue: 1 p95-101, 7p
Publikováno v:
IEEE Transactions on Electron Devices; Apr2021, Vol. 68 Issue 4, p1420-1424, 5p
Autor:
d'Esposito, Rosario
This work is focused on the characterization of electro-thermal effects in advanced SiGe hetero-junction bipolar transistors (HBTs); two state of the art BiCMOS processes have been analyzed: the B11HFC from Infineon Technologies (130nm) and the B55 f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9df4c0df08c563b4da3c954bcc6915b5
http://hdl.handle.net/20.500.12278/4987
http://hdl.handle.net/20.500.12278/4987
Publikováno v:
IEEE Transactions on Electron Devices; Oct2012, Vol. 59 Issue 10, p2619-2625, 7p
Publikováno v:
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p871-874, 4p
Autor:
Golani, Prafful, Saha, Chinmoy Nath, Sundaram, Prakash P., Liu, Fengdeng, Truttmann, Tristan K., Chaganti, V. R. Saran Kumar, Jalan, Bharat, Singisetti, Uttam, Koester, Steven J.
Publikováno v:
Applied Physics Letters; 10/17/2022, Vol. 121 Issue 16, p1-7, 7p
Autor:
Sahoo, Amit Kumar amit-kumar.sahoo@ims-bordeaux.fr, Weiß, Mario1, Fregonese, Sébastien1, Malbert, Nathalie1, Zimmer, Thomas1
Publikováno v:
Solid-State Electronics. Aug2012, Vol. 74, p77-84. 8p.