Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Theresia Knobloch"'
Autor:
Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited number of low Schottky barrier spots through which chan
Externí odkaz:
https://doaj.org/article/4dc4c462dd604865a0278a59c121b370
Autor:
Fabian Ducry, Dominic Waldhoer, Theresia Knobloch, Miklos Csontos, Nadia Jimenez Olalla, Juerg Leuthold, Tibor Grasser, Mathieu Luisier
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-10 (2022)
Abstract Two-dimensional materials have been widely investigated to implement memristive devices for data storage or neuromorphic computing applications because of their ultra-scaled thicknesses and clean interfaces. For example, resistance switching
Externí odkaz:
https://doaj.org/article/b5f0f2941d84422d9bc5ba6417e6d7f8
Autor:
Yury Yu. Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-15 (2020)
The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D techno
Externí odkaz:
https://doaj.org/article/a3906599e6e3493a9e85dbcbc3c20750
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3548 (2022)
For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D) materials are a potential replacement for silicon since even atomically thin 2D semiconductors can maintain sizable mobilities and provide enhanced gate control in
Externí odkaz:
https://doaj.org/article/df40b6781e6b4323989561bea5131388
Autor:
Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1163-1169 (2019)
We propose double-gated n-type WSe2 FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO2 ALD on an Al2O3 seed layer obtained from the evaporation and oxidation by air exposure of a
Externí odkaz:
https://doaj.org/article/c82e16e2813f4c9a8053419461f0c56d
Autor:
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 972-978 (2018)
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the h
Externí odkaz:
https://doaj.org/article/cc3c1d6d53254562a8b094a90e326b52
Publikováno v:
Proceedings, Vol 1, Iss 4, p 341 (2017)
This paper investigates the performance of surface acoustic wave (SAW) devices as low power MEMS temperature sensors using reactive sputter deposited aluminum nitride (AlN) and scandium doped aluminum nitride (AlScN) as piezoelectric layers on sapphi
Externí odkaz:
https://doaj.org/article/74b55a338bbb4303aae0214a0c74ad16
Publikováno v:
ECS Transactions. 111:219-228
At present, silicon very large-scale integration has reached channel thicknesses of 7 nm. However, further scaling is becoming increasingly challenging as the gate electrostatics requires a significant reduction in channel thickness to about a fourth
Autor:
Christian Schleich, Dominic Waldhor, Theresia Knobloch, Weifeng Zhou, Bernhard Stampfer, Jakob Michl, Michael Waltl, Tibor Grasser
Publikováno v:
IEEE Transactions on Electron Devices. 69:4479-4485
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h