Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Theresa Berthold"'
Publikováno v:
Notfallmedizin up2date. 17:153-165
Autor:
Jan Wnent, Birgitt Alpers, Leonie Hannappel, Marcel Zill, Janina Kosan, Theresa Berthold, Jan-Thorsten Gräsner
Publikováno v:
Open Journal of Preventive Medicine. 11:391-409
Background: Multicentric prospective cohort investigation survey conducted between 1st of March and 1st of April 2021on SARS-CoV-2 occupational risk for German Emergency Medical Services (EMS) personnel. Study Objectives: Primary: The objective is to
Publikováno v:
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Anodic bonding is in general a very attractive low temperature bonding method. Utilizing the progress in glass structuring and with adapted bonding conditions it can be used for CMOS-MEMS integrated wafers enabaling very complex, multifunctional chip
Autor:
Holger von Wenckstern, Jonas Michel, Alexandra Papadogianni, Marcel Himmerlich, Daniel Splith, Julius Rombach, Oliver Bierwagen, Marius Grundmann, Stefan Krischok, Theresa Berthold
Publikováno v:
ACS Applied Materials & Interfaces. 11:27073-27087
Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In2O3), is often challenged by the presence of a distinct surface electron accumulation layer. We investigated the material properties and electrical tr
Autor:
Stefan Krischok, Vladimir Polyakov, Oliver Bierwagen, Julius Rombach, Theresa Berthold, Marcel Himmerlich, Alexandra Papadogianni
Publikováno v:
Physical Review B. 102
${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ is an $n$-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant semiconductors, such as InAs, InN, ${\mathrm{SnO}}_{2}$, and ZnO. Even though the
Autor:
Theresa Berthold, Thomas Stauden, Heiko O. Jacobs, Marcel Himmerlich, Johannes Reiprich, Jörg Pezoldt
Publikováno v:
Materials Science Forum. 897:642-645
Gallium oxide nanowires were grown on different substrates using a corona plasma assisted vapor phase epitaxy process and gold catalyst. It is shown that the silicon carbide pseudo substrate in combination with the plasma excitation of the gas phase
Autor:
Jonas, Michel, Daniel, Splith, Julius, Rombach, Alexandra, Papadogianni, Theresa, Berthold, Stefan, Krischok, Marius, Grundmann, Oliver, Bierwagen, Holger, von Wenckstern, Marcel, Himmerlich
Publikováno v:
ACS applied materialsinterfaces. 11(30)
Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In
Autor:
Oleksandr Romanyuk, Oliver Supplie, Thomas Hannappel, Gernot Ecke, Pingo Mutombo, Christian Koppka, Peter Kleinschmidt, Andreas Nägelein, Stefan Krischok, Matthias Steidl, Agnieszka Paszuk, Theresa Berthold, Marcel Himmerlich
Publikováno v:
Applied Surface Science. 534:147346
Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtu
Autor:
Markus Mischo, Oliver Ambacher, Julius Rombach, Stefan Krischok, Theresa Berthold, Oliver Bierwagen, Marcel Himmerlich, Volker Cimalla, Lutz Kirste, Sören Selve, Alexandra Papadogianni
Publikováno v:
Sensors and Actuators B: Chemical. 236:909-916
Single crystalline and textured In2O3 thin films with (1 1 1) surface orientation, grown by plasma-assisted molecular beam epitaxy, were used as a model system to study the role of bulk and surface electron accumulation layer conductance for ozone se
Autor:
V. Cimalla, Anja Eisenhardt, Stefan Krischok, Marcel Himmerlich, Theresa Berthold, Ch. Y. Wang, Oliver Ambacher
Publikováno v:
physica status solidi (a). 213:831-838
authoren The interaction of defect-rich nanocrystalline indium oxide films, which have previously shown to exhibit excellent ozone sensing properties, with O3, O2, and H2O molecules is investigated using ultra-violet and X-ray photoelectron spectrosc