Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Theodoros Simopoulos"'
Publikováno v:
International Journal of Circuit Theory and Applications. 49:2238-2254
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7651cf33c1913477d66c3861e667350
https://doi.org/10.1002/cta.3024
https://doi.org/10.1002/cta.3024
Publikováno v:
ICM
This work presents an application for automatically placing sub-modules of an ALU to create a layout design. This process is made as easy to use as possible by utilizing a webpage environment as the user interface. The user is offered a selection of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0038d3bffb157a6b88aba97dd4145d0
https://doi.org/10.1109/icm50269.2020.9331499
https://doi.org/10.1109/icm50269.2020.9331499
Publikováno v:
Microelectronic Engineering. 163:21-25
A speedup technique for the write function of static memories, achieved via multi voltage manipulation, is presented. The designs created to support this technique and the test circuit that verifies the percentage of the speedup are implemented on ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62489268ba473d2ac546c81331c6c44e
https://doi.org/10.1016/j.mee.2016.05.018
https://doi.org/10.1016/j.mee.2016.05.018
Publikováno v:
Journal of Engineering Science and Technology Review. 9:138-141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eaa074e1054c5c26c4da9ac70bd766a
https://doi.org/10.25103/jestr.094.21
https://doi.org/10.25103/jestr.094.21
Publikováno v:
High-Speed and Lower Power Technologies ISBN: 9781351242295
High-Speed and Lower Power Technologies
High-Speed and Lower Power Technologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b1b0a5dfe8245d682d6f730ff82e9eb
https://doi.org/10.1201/9781351242295-10
https://doi.org/10.1201/9781351242295-10
Publikováno v:
MOCAST
In this work, a novel architecture that simultaneously accesses multiple and non-overlapped sub-regions of a static random access memory, is presented. The selection of the multi memory fields is succeeded via intra-encoders, placed one for every mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707baee4657367f1a070d9c96412611c
https://doi.org/10.1109/mocast.2017.7937630
https://doi.org/10.1109/mocast.2017.7937630
Publikováno v:
Journal of Circuits, Systems and Computers. 28:1940008
In this work, we extend the implementation guidelines of the WDSRAM — Write Driver SRAM — through the definition of a hierarchical implementation model which is applied on the material layout memory design level. This model can be used in order t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c226e4b0e1a6230c7c64e3e986dabf7
https://doi.org/10.1142/s0218126619400085
https://doi.org/10.1142/s0218126619400085
Publikováno v:
2016 5th International Conference on Modern Circuits and Systems Technologies (MOCAST).
In this work, the implementation of a static memory grid, consisting of sectors with size 256×8 bits, is presented. The grid supports memory write speedup leading to a minimized write pulse of at least 5 times than the typical implementation of stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::428e128330f8371853eea88ef3336687
https://doi.org/10.1109/mocast.2016.7495126
https://doi.org/10.1109/mocast.2016.7495126
Publikováno v:
Panhellenic Conference on Informatics
The implementation of a standard cell library based on the low leakage technology of UMC 65nm is presented. The library is complete having combinational cells, sequential cells and other support cells. Most of the cells exist in three driving strengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9340279b7e793a4e386813f1a50f6f8
https://doi.org/10.1145/2645791.2645826
https://doi.org/10.1145/2645791.2645826
Publikováno v:
Journal of Circuits, Systems & Computers; 2019 Supplement1, Vol. 28, pN.PAG-N.PAG, 14p