Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Theodore S. Moise"'
Publikováno v:
IEEE Transactions on Electron Devices. 67:4482-4487
The programming of partial polarization in ferroelectric (FE) hafnium zirconate (HZO) capacitors is shown to depend on the delay between FE reset and the polarization write pulse (delay-before-write), revealing a subtle history dependence. Programmin
Publikováno v:
Advanced Functional Materials. 32:2110263
Autor:
Theodore S. Moise, Woody Hu Yiqiang, Karsten Beckmann, Avyaya Jayanthinarasimham, Martin Anselm, Thibault Kempf, Dann Morillon
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
• Precompetitive — University involvement • Fundamental materials research at Universities • Consortia, IMEC, SEMATECH • SRC • Risk averse to taking next step which is taking a precompetitive product into mass production • Closer to mar
Autor:
Theodore S. Moise, Huang-Chun Wen, T. Wang, Scott R. Summerfelt, M. Ball, John A. Rodriguez, K. R. Udayakumar, Tamer San, C. Zhou, R. Bailey, M. Wiegand, T. Graf
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
Systematic evaluation of ferroelectric memory (FRAM) data retention mechanisms under high temperature exposure are reported. The FRAM devices are embedded on ultra-low power, analog-enhanced 130nm and 180nm CMOS technologies. Capability of the FRAM t
Autor:
S. R. Summerfelt, R. Bailey, P. Staubs, J. Rodriguez, K. Boku, Theodore S. Moise, M. Arendt, Gregory B. Shinn, K. Remack, J. Eliason, K. R. Udayakumar
Publikováno v:
Japanese Journal of Applied Physics. 47:2710-2713
Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leak
Autor:
Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 46:2180-2183
We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi
Autor:
S. R. Summerfelt, Theodore S. Moise, K. R. Udayakumar, Sanjeev Aggarwal, Hugh P. McAdams, B. Rathsack, Francis G. Celii, J. Rodriguez, Lindsey H. Hall, L. Matz, J. S. Martin, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 45:3202-3206
High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bi
Autor:
R. Bailey, K. Boku, Kelly J. Taylor, John A. Rodriguez, Francis G. Celii, Joe W. McPherson, Glen R. Fox, Theodore S. Moise, Hugh P. McAdams, M. Depner, Sanjeev Aggarwal, K. Remack, Lindsey H. Hall, K. R. Udayakumar, S. Martin, Scott R. Summerfelt
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:436-449
We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (
Autor:
Yunchen Qiu, R. Acklin, Xiao-Hong Du, K. Remack, Anand Seshadri, John Y. Fong, D. Liu, W.F. Kraus, J. Roscher, Terence G. W. Blake, Scott R. Summerfelt, S. Natarajan, Sudhir K. Madan, J. Eliason, Ning Qian, J. Rodriguez, Theodore S. Moise, Hugh P. McAdams
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:667-677
A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process
Autor:
J. Y. Yang, D. Leipold, Kenneth J. Maggio, Baher S. Haroun, Theodore S. Moise, D.D. Buss, B.L. Evans, W.R. Krenik, J. Bellay
Publikováno v:
IEEE Transactions on Electron Devices. 50:546-556
Worldwide demand for Personal Internet Products is increasing rapidly, and will shape the directions of CMOS technology in the years ahead. Personal Internet Products are loosely defined in this paper as communication, computing and consumer products