Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Theodore Letavic"'
Publikováno v:
Philips Journal of Research. 49:91-124
Film quality and crystalline perfection of SOI layers obtained by bonding and etch back silicon-on-insulator (BESOI) technology have been studied. In particular, the various mechanisms of defect generation that contribute to a degradation of the orig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2983841458644cef675335770c82ba4f
https://doi.org/10.1016/0165-5817(95)82005-1
https://doi.org/10.1016/0165-5817(95)82005-1
Publikováno v:
Philips Journal of Research. 49:125-138
The incorporation of strain is inherent in the manufacture of bond and etchback silicon-on-insulator (BESOI) substrates. In this paper, the principal sources of strain are identified and the magnitude of the strain is estimated. The strain sources di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efb3ab4726809afa6705fcd9154924fd
https://doi.org/10.1016/0165-5817(95)82006-x
https://doi.org/10.1016/0165-5817(95)82006-x
Publikováno v:
IEEE Electron Device Letters. 20:490-492
Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0f8b558126a8c3e74ed01f003028fad
https://doi.org/10.1109/55.784462
https://doi.org/10.1109/55.784462
Publikováno v:
2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
This paper presents a thin-layer high voltage silicon-on-insulator conductivity modulated device which has been optimized for use within integrated switch mode power supply applications. The device contains a linearly-graded charge profile in the dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70e9aa33d628a96f96045458cb1fdb5
https://doi.org/10.1109/ispsd.2006.1666145
https://doi.org/10.1109/ispsd.2006.1666145
Autor:
Helmut Baumgart, S. Merchant, R. Egloff, Emil Arnold, Theodore Letavic, Satyendranath Mukherjee, H. Pein
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549e4a0fb69b14822e42b549f80bb6d2
https://doi.org/10.1109/soi.1992.664834
https://doi.org/10.1109/soi.1992.664834
Publikováno v:
IEEE Electron Device Letters. 17:557-559
High-temperature off-state characteristics of thin-SOI RESURF LDMOS transistors were studied experimentally and theoretically and compared with off-state characteristics of junction-isolated bulk-Si power devices. At 200/spl deg/C, the off-state leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e5604e68d03d316f69958bd83f7ed6
https://doi.org/10.1109/55.545769
https://doi.org/10.1109/55.545769
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
This report describes the novel use of the field-plate in a SOI HV power FET as a V/sub DS/ sensing terminal. The sensing terminal can be used in over-voltage protection schemes without the need of an external clamping circuit. We have shown that thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511853dae6feea707a6f760839541f72
https://doi.org/10.1109/ispsd.2003.1225269
https://doi.org/10.1109/ispsd.2003.1225269
Autor:
R. Albu, I. Weijland, Theodore Letavic, Benoit Dufort, H. van Zwol, Satyendranath Mukherjee, Mark Simpson, John Petruzzello
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
We present a thin-layer silicon-on-insulator (SOI) high-voltage PMOS device structure and measured performance characteristics. The all-implanted device structure supports voltage by multi-dimensional depletion from a combination of implanted surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25663a9987005658a9a978b587b9e4b
https://doi.org/10.1109/ispsd.2002.1016174
https://doi.org/10.1109/ispsd.2002.1016174
Autor:
Erik Peters, Mark Simpson, S. Herko, R. Aquino, Emil Arnold, Satyendranath Mukherjee, Theodore Letavic, J. Curcio
Publikováno v:
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A new high-volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f76d4996ebd50c2126d8e70bcfb0e52a
https://doi.org/10.1109/ispsd.1999.764126
https://doi.org/10.1109/ispsd.1999.764126
Autor:
H. Bhimnathwala, Satyendranath Mukherjee, R. Egloff, Helmut Baumgart, Theodore Letavic, S. Merchant, Emil Arnold
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
The recombination properties of minority carriers determine the basic electronic properties of SOI materials and control the performance of a variety of SOI devices. Knowledge of the minority carrier recombination characteristics and its correlation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230f0477ecbcd4cda511623b458afd5c
https://doi.org/10.1109/soi.1993.344600
https://doi.org/10.1109/soi.1993.344600