Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Theodore G. Tessier"'
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:000590-000610
The electroplating of underlying metal redistribution layers, under-bump metallization (UBM) layers, WLCSP, Cu pillar and other flip chip applications is well established in the semiconductor industry. The use of semi-additive plating can sometimes b
Autor:
Kumi Onodera, Masahiro Okamoto, Nobuki Ueta, Koji Munakata, Osamu Nakao, Satoshi Okude, Kazu Itoi, Theodore G. Tessier
Publikováno v:
International Symposium on Microelectronics. 2014:000161-000164
As electronic devices decrease in size and increase in functionality, their surface-mount components grow in number. This trend created a need for securing appropriate space in and on a wiring board to accommodate necessary components. Conventionally
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000863-000885
The common via formation processes used today for dielectrics in WLCSP RDL and flipchip products typically rely on standard photolithography processing using stepper and 1x aligner equipment and processes. There is considerable interest in using lase
Autor:
David Clark, Yoshinori Sano, Theodore G. Tessier, Osamu Nakao, Senthil Sivaswamy, Tony Curtis, Kazuhisa Itoi, Nobuyuki Ueta, Satoshi Okude, Masahiro Okamoto
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:1-32
Fan-Out Wafer Level Packaging (FO-WLP) technology has been developed in recent years to overcome the limitations of Fan-in WLP (FI-WLP) packages and to add more functionality to WLP. Fan-Out packages expand the WLP market to higher pin count devices
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:002336-002359
The proliferation of Wafer Level Chip Scale Packages (WLCSPs) in portable handheld products has occurred due to the minimalist form factor, high reliability and low cost packaging that they afford. As the demand for WLCSPs has grown exponentially in
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:002360-002376
There is considerable interest in the semiconductor industry regarding Cu pillar bumping for finer pitch flip chip and 3D packaging applications. A common Cu Pillar method of production incorporates a combined Cu plated post topped with a plated sold
Autor:
Daniel F. Baldwin, Brian J. Lewis, Zhaozhi Li, Paul N. Houston, John L. Evans, Eugene A. Stout, Theodore G. Tessier, Sangil Lee
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 7:146-151
The industry has witnessed the adoption of the flip chip for its low cost, small form factor, high performance, and great I/O flexibility. As three-dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, whic
Autor:
John L. Evans, Brian J. Lewis, Zhaozhi Li, Daniel F. Baldwin, Eugene A. Stout, Paul N. Houston, Theodore G. Tessier
Publikováno v:
International Symposium on Microelectronics. 2010:000548-000553
Three Dimensional (3D) Packaging has become an industry obsession as the market demand continues to grow toward higher packaging densities and smaller form factor. In the meanwhile, the 3D die-to-wafer (D2W) packaging structure is gaining popularity
Autor:
Zhaozhi Li, John L. Evans, Eugene A. Stout, Daniel F. Baldwin, Theodore G. Tessier, Brian J. Lewis, Paul N. Houston, Sangil Lee
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000708-000735
The industry has witnessed the adoption of flip chip for its low cost, small form factor, high performance and great I/O flexibility. As the Three Dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, which
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 18:269-276
This paper demonstrates how laminate based printed-wiring-board technology (PWB) and thin film deposited dielectric technology (MCM-D) can be combined to form a low-cost solution for microelectronic interconnect schemes which require high density cir