Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Theo Standaert"'
Autor:
Benjamin D. Briggs, Robert R. Robison, Nicholas A. Lanzillo, Theo Standaert, Christian Lavoie
Publikováno v:
Computational Materials Science. 158:398-405
The vertical resistance of Cu/Ta/Ru/Cu stacks is calculated using a combination of first-principles density functional theory (DFT) and a Non-Equilibrium Green’s Function (NEGF) formalism. The effects of oxidizing either one or both of the Ta and R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a75b161abdf2fa02782f3c924ba95dc
https://doi.org/10.1016/j.commatsci.2018.11.040
https://doi.org/10.1016/j.commatsci.2018.11.040
Autor:
Son Nguyen, Hosadurga Shobha, Thomas Haigh, James Chen, Joe Lee, Takeshi Nogami, Eric Liniger, Stephan Cohen, Chao-Kun Hu, Huai Huang, Yiping Yao, Donald Canaperi, CorneliusBrown Peethala, Theo Standaert, Griselda Bonilla
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94334a8e74aad3bcfbd1c2177490063
https://doi.org/10.7567/ssdm.2020.c-1-01
https://doi.org/10.7567/ssdm.2020.c-1-01
Publikováno v:
Journal of Applied Physics. 121:194301
This work describes an ab initio study of the electronic structure, electron transport, and energetic properties of cobalt disilicide (CoSi2) and nickel disilicide (NiSi2) nanowires with widths ranging from approximately 0.5 to 2.5 nm using density f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe888ab5f74906a3c1ac4d9f526cc60
https://doi.org/10.1063/1.4983635
https://doi.org/10.1063/1.4983635
Autor:
Laertis Economikos, Gerhard Lembach, Fen Chen, Dimitri R. Kioussis, Moosung Chae, Thom Gow, Theo Standaert, Jihong Choi, Vinayan C. Menon, Youngjin Choi, Joseph Linville, Wai-kin Li, Ravi Prakash Srivastava, Ronald G. Filippi, Edward Engbrecht, Sujatha Sankaran, Vincent J. McGahay, Wei-Tsu Tseng, Lee M. Nicholson, Kenneth M. Davis, Glenn A. Biery, Naftali E. Lustig, Anthony D. Lisi, Hermann Wendt, Kaushik A. Kumar, Kaushik Chanda, P. McLaughlin, Oscar Bravo, William F. Landers, Frieder H. Baumann, Tibor Bolom, Andrew H. Simon, Allen H. Gabor, Carsten Peters, Craig Child
Publikováno v:
MRS Proceedings. 1079
A tool has been developed that can be used to characterize or validate a BEOL interconnect technology. It connects various process assumptions directly to electrical parameters including resistance. The resistance of narrow copper lines is becoming a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2407a7a769197d96ae3e99aa87c2ec1a
https://doi.org/10.1557/proc-1079-n02-01
https://doi.org/10.1557/proc-1079-n02-01