Výsledky vyhledávání - "Theo J. Frot"

Akademický článek

Hyperconnected molecular glass network architectures with exceptional elastic properties

Autor: Joseph A. Burg, Mark S. Oliver, Theo J. Frot, Mark Sherwood, Victor Lee, Geraud Dubois, Reinhold H. Dauskardt

Publikováno v: Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)

Organic—inorganic glasses can possess unique properties and functionalities, but their poor mechanical strength and stiffness typically limit their applicability. Here the authors demonstrate that inducing hyperconnectivity into silicon-based glass

Externí odkaz: https://doaj.org/article/25938346ee8841f697e9e45ed0ed0136

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Using Unentangled Oligomers To Toughen Materials

Autor: Scott G. Isaacson, Geraud Dubois, Krystelle Lionti, Yusuke Matsuda, Theo J. Frot, Reinhold H. Dauskardt, Willi Volksen

Publikováno v: ACS Applied Materials & Interfaces. 10:27549-27554

Entanglements between polymer chains are responsible for the strength and toughness of polymeric materials. When the chains are too short to form entanglements, the polymer becomes weak and brittle. Here we show that molecular bridging of oligomers i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ace038ebcff4ff248c950ef8831eee5c
https://doi.org/10.1021/acsami.8b03050

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Atmospheric Plasma Deposited Dense Silica Coatings on Plastics

Autor: Geraud Dubois, Marvi A. Matos, Liam S. Cavanaugh Pingree, Alpana N. Ranade, Reinhold H. Dauskardt, Theo J. Frot, Linying Cui

Publikováno v: ACS Applied Materials & Interfaces. 4:6587-6598

We explore the application of a high-temperature precursor delivery system for depositing high boiling point organosilicate precursors on plastics using atmospheric plasma. Dense silica coatings were deposited on stretched poly(methyl methacrylate),

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a5bfd8aecba54bd6f83b68f081f8494
https://doi.org/10.1021/am301723d

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Hyperconnected molecular glass network architectures with exceptional elastic properties

Autor: Reinhold H. Dauskardt, Joseph A. Burg, Victor Y. Lee, Theo J. Frot, Mark Oliver, Geraud Dubois, Mark H. Sherwood

Publikováno v: Nature Communications
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)

Hyperconnected network architectures can endow nanomaterials with remarkable mechanical properties that are fundamentally controlled by designing connectivity into the intrinsic molecular structure. For hybrid organic–inorganic nanomaterials, here

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53563e3a29842c409281da02dcccaef0
https://pubmed.ncbi.nlm.nih.gov/29044110

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Post Porosity Plasma Protection: Scaling of Efficiency with Porosity

Autor: Robert L. Bruce, Vaughn R. Deline, Sampath Purushothaman, Theo J. Frot, Teddie Magbitang, Willi Volksen, Geraud Dubois, Dolores C. Miller

Publikováno v: Advanced Functional Materials. 22:3043-3050

Increasing the porosity of oxycarbosilane dielectrics is a key approach to lower the interconnect signal delay and thus enable manufacturing of lower power consumption and higher performance microprocessors. However, this path leads to excessive diel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::120ea284088065cadc163df91cd6ffc4
https://doi.org/10.1002/adfm.201200152

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Impact of low-k structure and porosity on etch processes

Autor: Willi Volksen, Nicolas Casiez, Maxime Darnon, Geraud Dubois, Thierry Chevolleau, Christophe Licitra, R. Hurand, Névine Rochat, Theo J. Frot, Thibaut David, Nicolas Posseme

Publikováno v: Journal of Vacuum Science and Technology
Journal of Vacuum Science and Technology, 2013, pp.B 31, 011207. ⟨10.1116/1.4770505⟩
Journal of Vacuum Science and Technology B
Journal of Vacuum Science and Technology B, 2013, pp.B 31, 011207. ⟨10.1116/1.4770505⟩

The fabrication of interconnects in integrated circuits requires the use of porous low dielectric constant materials that are unfortunately very sensitive to plasma processes. In this paper, the authors investigate the etch mechanism in fluorocarbon-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07ed1505ec20695d542a545169611ddb
https://hal.science/hal-00808847

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Post Porosity Plasma Protection applied to a wide range of ultra low-k materials

Autor: Teddie Magbitang, P. M. Rice, Robert L. Bruce, Leslie E. Krupp, Stephan A. Cohen, G. Dubois, Theo J. Frot, W. Volksen, Sampath Purushothaman, Michael F. Lofaro

Publikováno v: 2012 IEEE International Interconnect Technology Conference.

Integration challenges of porous ultra low-k (ULK) materials resulting from the ULKs' high sensitivity to process damage constitute a major roadblock to their implementation in back-end-of-the-line wiring structures for advanced technology nodes. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed8f7845b70099bf2393519230b6ebe4
https://doi.org/10.1109/iitc.2012.6251565

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Future of PECVD and spin-on ultra low-k materials

Autor: Reinhold H. Dauskardt, Willi Volksen, Theo J. Frot, Stephen M. Gates, Teddie Magbitang, G. Dubois, Mark Oliver

Publikováno v: 2011 IEEE International Interconnect Technology Conference.

A few years ago, we developed at the IBM Almaden Research Center, the concept of introducing carbon in low-k materials in the form of bridging units between the silicon atoms and not as a pendant methyl group. Since then, this strategy has been widel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7647589362eca27b51a9736498a57e50
https://doi.org/10.1109/iitc.2011.5940287

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Post Porosity Plasma Protection a new approach to integrate k ≤ 2.2 porous ULK materials

Autor: Dolores C. Miller, Sampath Purushothaman, Michael F. Lofaro, Teddie Magbitang, G. Dubois, Robert L. Bruce, Theo J. Frot, W. Volksen

Publikováno v: 2011 IEEE International Interconnect Technology Conference.

Integration of porous low dielectric constant materials constitutes a major roadblock in the reliable manufacturing of back end of the line (BEOL) wiring for the advanced technology nodes. The two main issues for Ultra low-k (ULK) materials are their

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::173e3b8101d16c3bafc62c9d3bf8de75
https://doi.org/10.1109/iitc.2011.5940272

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