Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Theeradetch Detchphrom"'
Autor:
Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Russell D. Dupuis, Minkyu Cho, Zhiyu Xu, Theeradetch Detchphrom
Publikováno v:
ECS Transactions. 98:49-59
Gallium-nitride and related materials have become suitable semiconductor platforms for next-generation power electronic devices. This materials system leverages unique properties of wider energy bandgap, higher carrier mobility, and ultrashort carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f764b2b9848fbbd489e36c7bcded90a1
https://doi.org/10.1149/09806.0049ecst
https://doi.org/10.1149/09806.0049ecst
Autor:
Shyh-Chiang Shen, Chuan-wei Tsou, Mi-Hee Ji, Marzieh Noodeh, Edward Letts, Daryl Key, Tadao Hashimoto, Theeradetch Detchphrom, Russell D Dupuis
Publikováno v:
ECS Meeting Abstracts. :1350-1350
The successful development of III-V nitride materials systems has led to active research of advanced electronic devices in the recent decades. III-nitride (III-N)-based devices have a bandgap engineering flexibility, large energy gap, direct band str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9476913ad5f308dea92cdc69031d3aa3
https://doi.org/10.1149/ma2019-02/31/1350
https://doi.org/10.1149/ma2019-02/31/1350
Autor:
Jeomoh Kim, Theeradetch Detchphrom, Zachary Lochner, Yi-Che Lee, Tsung-Ting Kao, Mi-Hee Ji, Russell D. Dupuis, Shyh-Chiang Shen, Jae-Hyun Ryou
Publikováno v:
ECS Transactions. 58:261-267
We report state-of-the-art d.c. and RF performance of GaN/InGaN npn DHBTs grown by the MOCVD technology on sapphire substrates. The fabricated GaN/InGaN HBTs achieved a collector current density greater than 50 kA/cm2 and a d.c. current gain of 60 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e659c5b2a10440cf900a97ce26a8d714
https://doi.org/10.1149/05804.0261ecst
https://doi.org/10.1149/05804.0261ecst
Autor:
Theeradetch Detchphrom, Jeomoh Kim, Mi-Hee Ji, Zachary Lochner, Yi-Che Lee, Shyh-Chiang Shen, Russell D. Dupuis, Tsung-Ting Kao, Jae-Hyun Ryou
Publikováno v:
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.
We report high performance GaN-based npn heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition (MOCVD) with state-of-the-art high collector current density (JC) and low knee voltage (Vknee). For HBTs grown on sapph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2dd9b9c4d750e81eaf2dfa095fc04a
https://doi.org/10.1109/wipda.2013.6695571
https://doi.org/10.1109/wipda.2013.6695571
Autor:
Russell D Dupuis, Jeomoh Kim, Zachary Lochner, Mi-Hee Ji, Tsung-Ting Kao, Jae-Hyun Ryou, Theeradetch Detchphrom, Shyh-Chiang Shen
Publikováno v:
ECS Meeting Abstracts. :1928-1928
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1fdbb35fca10bfd951df57d406dff2
https://doi.org/10.1149/ma2013-02/25/1928
https://doi.org/10.1149/ma2013-02/25/1928