Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Thanh Viet Dinh"'
Autor:
Thi Minh Chau Le, Xuan Chau Le, Ngoc Nguyen Phuong Huynh, Anh Tuan Doan, Thanh Viet Dinh, Minh Quan Duong
Publikováno v:
International Journal of Renewable Energy Development, Vol 12, Iss 3, Pp 467-477 (2023)
This paper implements two novel meta-heuristic algorithms, including the Coati optimization algorithm (COA) and War strategy optimization (WSO) for determining the optimal solutions to the optimal power flow problem incorporating the use of wind turb
Externí odkaz:
https://doaj.org/article/8994f9a85f8b42009eb03888f1c3a468
Autor:
Kies, Alexander, Schyska, Bruno, Thanh Viet, Dinh, von Bremen, Lueder, Heinemann, Detlev, Schramm, Stefan
Publikováno v:
In Energy Procedia September 2017 125:207-213
Autor:
M. Vroubel, Thanh Viet Dinh, L. F. Tiemeijer, M. Raucoules-aime, Hans Tuinhout, P. Grudowski, Ihor Brunets, B. W. C. Hovens, C. Ghidini, Nicole Wils, Guido T. Sasse, S. Dal Toso
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
High-voltage RF active and passive devices, including LDMOS, fringe capacitors, transformers and inductors with good RF performance, are required for building integrated RF power amplifiers at Watt-level in high-performance cost-effective RF front-en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b7b468781c6c5ab18a4fb7ecc5f81a
https://doi.org/10.1109/iedm19573.2019.8993471
https://doi.org/10.1109/iedm19573.2019.8993471
Autor:
Thanh Viet Dinh
Publikováno v:
ECS Meeting Abstracts. :1391-1391
FDSOI has shown its benefits, compared to other planar bulk technologies, in low power applications by a better electrostatic control, a reduction in leakage currents and device variability. Thanks to the isolation box in the substrate and the intrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccce38f99d5b99021934c5707137d40f
https://doi.org/10.1149/ma2020-01241391mtgabs
https://doi.org/10.1149/ma2020-01241391mtgabs
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A novel EDMOS device with a breakdown voltage of ∼10V and a record high RF performance, with f T ∼ 90 GHz and /MAX ∼ 450 GHz, is presented. The transistor is composed of a thin gate oxide (logic) in the channel and a thicker oxide (IO) in the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025138f4247cd7b7ceacc39691505eb4
https://doi.org/10.1109/iedm.2017.8268459
https://doi.org/10.1109/iedm.2017.8268459
Publikováno v:
Solid-State Electronics
A global additional uniaxial stress ranging from −1 GPa to 1 GPa along different directions has been applied to SiGe HBTs in order to improve the high-frequency performance of these devices. Two transistors have been investigated: a slow one (peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c33d6d94f052ad4ffaa8b684485431d
https://doi.org/10.1016/j.sse.2011.01.027
https://doi.org/10.1016/j.sse.2011.01.027
Publikováno v:
Solid-State Electronics. 54:942-949
A vertical impact ionization MOSFET (IMOS) with a thin layer of biaxially strained SiGe in the impact ionization (II) region near the drain and in the channel is thoroughly investigated by Full-Band Monte Carlo (FB-MC) and Hydrodynamic simulations. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8beec0868c0b26832162c42e6825f4e4
https://doi.org/10.1016/j.sse.2010.04.015
https://doi.org/10.1016/j.sse.2010.04.015
Autor:
Johan J.T.M. Donkers, Thanh Viet Dinh, Tony Vanhoucke, Pieter Weijs, Ihor Brunets, Pieter van Dijk, Patrick Sebel, Paul Huiskamp, Ronald Werkman, Ralf Pijper, Peter H.C. Magnée
Publikováno v:
ECS Meeting Abstracts. :1046-1046
With the progress of RF CMOS and BiCMOS technologies, millimeter-wave applications have come well within reach of silicon-based technologies [1-3]. NXP’s SiGe BiCMOS process offers a 0.25μm CMOS base-line, with shallow- and deep-trench isolation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ec1d594d0fb39b99e3f2c5da47143fc
https://doi.org/10.1149/ma2018-02/31/1046
https://doi.org/10.1149/ma2018-02/31/1046
Autor:
Christoph Jungemann, Thanh Viet Dinh
Publikováno v:
Solid-State Electronics. 53:1318-1324
With the constant-matrix-element approach we have calculated the impact ionization (II) rates for uniaxially/biaxially strained Si and biaxially strained SiGe. Energy and momentum are exactly conserved during the calculation of the six-dimensional in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe81ff2513808d74aa31401aae6a89f
https://doi.org/10.1016/j.sse.2009.09.013
https://doi.org/10.1016/j.sse.2009.09.013
Autor:
Thanh Viet Dinh, Christoph Jungemann
Publikováno v:
2009 10th International Conference on Ultimate Integration of Silicon.
With Fermi's golden rule we have calculated the impact ionization (II) rates for strained SiGe. In our approach, the energy and the momentum are exactly conserved during the calculation of the six-dimensional integral in k-space over 4 conduction and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fa1d83a8ebc905970323ce380509c60
https://doi.org/10.1109/ulis.2009.4897543
https://doi.org/10.1109/ulis.2009.4897543