Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Thanh Tan Vo"'
Autor:
Seraphin, Hugues, Thanh, Tan Vo
Publikováno v:
In The International Journal of Management Education July 2020 18(2)
Publikováno v:
Proceedings of the National Academy of Sciences. 120
The role of parvalbumin (PV) interneurons in vascular control is poorly understood. Here, we investigated the hemodynamic responses elicited by optogenetic stimulation of PV interneurons using electrophysiology, functional magnetic resonance imaging
Autor:
Seonghoon Kim, Hyun Seok Moon, Thanh Tan Vo, Chang-Ho Kim, Geun Ho Im, Sungho Lee, Myunghwan Choi, Seong-Gi Kim
Publikováno v:
Neuron.
Autor:
Huy-Binh Do, Hoang-Trung Huynh, Thanh-Ngan Dang, Ngoc-Tam-Dan Lam, Lam-Nguyen Phan, Thanh-Tan Vo
Publikováno v:
2022 6th International Conference on Green Technology and Sustainable Development (GTSD).
Autor:
Seonghoon Kim, Hyun Seok Moon, Thanh Tan Vo, Chang-Ho Kim, Geun Ho Im, Myunghwan Choi, Seong-Gi Kim
Functional magnetic resonance imaging (fMRI) with optogenetic neural manipulation is a powerful tool that enables brain-wide mapping of effective functional networks. To achieve flexible manipulation of neural excitation throughout the mouse cortex,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5468ad00c0a1e6ac99db78429ba61d
https://doi.org/10.1101/2022.07.12.499420
https://doi.org/10.1101/2022.07.12.499420
Publikováno v:
Cerebral Cortex (New York, NY)
The BOLD fMRI response in the cortex is often assumed to reflect changes in excitatory neural activity. However, the contribution of inhibitory neurons to BOLD fMRI is unclear. Here, the role of inhibitory and excitatory activity was examined using m
Publikováno v:
Tourism Analysis; 2020, Vol. 25 Issue 1, p137-152, 16p
Autor:
Thanh, Tan Vo1
Publikováno v:
Revue des Sciences de Gestion. nov/dic2006, Issue 222, p35-45. 11p.
Autor:
Sang Sub Kim, Bach Thang Phan, Cao Vinh Tran, Hoang Cao Son Tran, Jaichan Lee, Tuan Tran, Tran Le, Mau Chien Dang, Hieu Van Le, Thanh Tan Vo
Publikováno v:
Journal of the Korean Physical Society. 60:1087-1091
The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a micr
Publikováno v:
European Journal of Tourism Research; 2016, Vol. 13, p132-138, 7p