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pro vyhledávání: '"Thanh Hoa Phan Van"'
Autor:
Quang Ho Luc, Thanh Hoa Phan Van, Hung Wei Yu, Ching Hsiang Hsu, Binh Tinh Tran, Chi Lang Nguyen, Chang Fu Dee, Hong Quan Nguyen, Chen Chen Chung, Diao Yuan Chiou, Yuen Yee Wong, Edward Yi Chang, Hai Dang Trinh
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
Growth conditions have investigated for growing high quality In 0.3 Ga 0.7 As and In 0.5 Ga 0.5 As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1609fe57c42f230351231a6fb9a9582c
https://doi.org/10.1109/smelec.2012.6417133
https://doi.org/10.1109/smelec.2012.6417133
