Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Thangaraju Sarasvathi"'
Autor:
Civale, Yann, Croes, Kristof, Miyamori, Yuichi, Velenis, Dimitrios, Redolfi, Augusto, Thangaraju, Sarasvathi, Ammel, Annemie Van, Cherman, Vladimir, Plas, Geert Van der, Cockburn, Andrew, Gravey, Virginie, Kumar, Nirajan, Cao, Zhitao, Travaly, Youssef, Tőkei, Zsolt, Beyne, Eric, Swinnen, Bart
Publikováno v:
In Microelectronic Engineering June 2013 106:155-159
Autor:
C.S. Premachandran, Justison Patrick, P. Paliwoda, Thangaraju Sarasvathi, Rahul Agarwal, Natarajan Mahadeva Iyer, Gondal Arfa, Rakesh Ranjan, Yap Sing Fui
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC).
Wafer level reliability of TSV has been studied with respect to FEOL (Front end of line) and BEOL (Back end of line) reliability aspects. TSV keep out zone (KoZ) study has been done with varying gate length and width of transistor. Voltage ramp stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2440b83a554d2a5f1b88831de222b967
https://doi.org/10.1109/ectc.2015.7159899
https://doi.org/10.1109/ectc.2015.7159899
Autor:
Kamineni, Himani Suhag, Kannan, Sukeshwar, Alapati, Ramakanth, Thangaraju, Sarasvathi, Smith, Daniel, Zhang, Dingyou, Gao, Shan
Publikováno v:
IEEE International Interconnect Technology Conference; 2014, p199-202, 4p
Autor:
Rabie, Mohamed A., S., Premachandran C., Ranjan, Rakesh, Natarajan, Mahadevan Iyer, Yap, Sing Fui, Smith, Daniel, Thangaraju, Sarasvathi, Alapati, Ramakanth, Benistant, Francis
Publikováno v:
IEEE International Interconnect Technology Conference; 2014, p203-206, 4p
Autor:
Fisher, Daniel W., Timoney, Padraig, Yeong-Uk Ko, Vaid, Alok, Thangaraju, Sarasvathi, Smith, Daniel, Sung Pyo Jung, Alapati, Ramakanth, Wonwoo Kim, Peak, Jonathan, Amin, Hemant, Johnson, Tim
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014); 2014, p270-273, 4p
Autor:
Timoney, Padraig, Fisher, Daniel, Yeong-Uk Ko, Vaid, Alok, Thangaraju, Sarasvathi, Smith, Daniel, Kamineni, Himani, Dingyou Zhang, Alapati, Ramakanth, Wonwoo Kim, Ke Xiao, Edmundson, Holly, Smith, Nigel, Peterson, Brennan, Amin, Hemant, Peak, Jonathan, Johnson, Tim
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014); 2014, p37-41, 5p
Autor:
Zhang, Dingyou1 (AUTHOR) Dingyou.Zhang@globalfoundries.com, Thangaraju, Sarasvathi1 (AUTHOR), Smith, Daniel1 (AUTHOR), Kamineni, Himani1 (AUTHOR), Klewer, Christian1 (AUTHOR), Scholefield, Mark1 (AUTHOR), Lei, Ming1 (AUTHOR), Vikram, Abhishek1 (AUTHOR), Lim, Victor1 (AUTHOR), Kim, Wonwoo1 (AUTHOR), Alapati, Ramakanth1 (AUTHOR)
Publikováno v:
Electronics Letters (Wiley-Blackwell). Jun2014, Vol. 50 Issue 13, p954-956. 3p.
Autor:
Cain, Jason P., Sanchez, Martha I., Timoney, Padraig, Ko, Yeong-Uk, Fisher, Daniel, Lu, Cheng Kuan, Ramnath, Yudesh, Vaid, Alok, Thangaraju, Sarasvathi, Smith, Daniel, Kamineni, Himani, Zhang, Dingyou, Kim, Wonwoo, Alapati, Ramakanth, Peak, Jonathan, Amin, Hemant, Edmunson, Holly, Race, Joe, Peterson, Brennan, Johnson, Tim
Publikováno v:
Proceedings of SPIE; April 2014, Vol. 9050 Issue: 1 p90500F-90500F-8, 814509p
Akademický článek
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Autor:
Dingyou Zhang1 Dingyou.Zhang@globalfoundries.com, Thangaraju, Sarasvathi1, Smith, Daniel1, Kamineni, Himani1, Klewer, Christian1,2, Scholefield, Mark1, Ming Lei1, Vikram, Abhishek1, Lim, Victor1, Wonwoo Kim1, Alapati, Ramakanth1
Publikováno v:
Electronics Letters (Wiley-Blackwell). 6/19/2014, Vol. 50 Issue 13, p954-955. 2p. 4 Diagrams, 3 Graphs.