Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Thanaporn Tohsophon"'
Publikováno v:
APL Materials, Vol 3, Iss 11, Pp 116105-116105-9 (2015)
Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO), H-doped In2O3 (IO:H), and
Externí odkaz:
https://doaj.org/article/1d8687996dcc46138a23bc0bfa303ec6
Autor:
Werner Mader, Jürg Hulliger, John R. Kirtley, Nikolai D. Zhigadlo, Wilfried Assenmacher, Mitra Iranmanesh, Thanaporn Tohsophon
Publikováno v:
Solid State Sciences. 88:6-12
A single-sample synthesis concept based on multi-element ceramic samples can produce a variety of local products. When applied to cuprate superconductors (SC), statistical modelling predicts the occurrence of possible compounds in a concentration ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e81039ebcb89b7976b72cd1640d3b522
https://doi.org/10.1016/j.solidstatesciences.2018.12.003
https://doi.org/10.1016/j.solidstatesciences.2018.12.003
Publikováno v:
Applied Surface Science. 258:9604-9609
Zinc oxide (ZnO) films have the potential in the emerging thin-film technologies which can be employed in thin-film solar cells, transistors, sensors and other optoelectronic devices. In this work, low cost sol–gel spin-coating technique was used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90fa5ccbdff277188c9e0eaa4ac21487
https://doi.org/10.1016/j.apsusc.2012.05.156
https://doi.org/10.1016/j.apsusc.2012.05.156
Publikováno v:
APL Materials, Vol 3, Iss 11, Pp 116105-116105-9 (2015)
APL Materials
APL Materials
Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO), H-doped In2O3 (IO:H), and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbfdf0677748f7d25359be9d4f52ccce
https://doi.org/10.1063/1.4935125
https://doi.org/10.1063/1.4935125