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Autor:
Abdelhakim Nafidi, Thami El Gouti, Ali Khalal, Driss Barkissy, Abderrazak Boutramine, Nassima Benchtaber
Publikováno v:
Applied Physics A. 123
We report here the theoretical calculations of band structures E(d 1), E(k z , k p ) and effective mass along the growth axis and in the plane of GaAs/Al x Ga1−x As superlattices, in the envelope function formalism. The effect of valence band offse
Autor:
A. Hannour, Thami El Gouti, Abderrazak Boutramine, Driss Barkissy, Abdellatif Elanique, Abdelhakim Nafidi
Publikováno v:
Applied Physics A. 122
The present work is devoted to the study of band structure and band gap in symmetric InAs (d 1 = 25 A)/GaSb (d 2 = 25 A) type II superlattice. Our calculations were performed in the envelope function formalism with the valence band offset Λ = 570 me