Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Thais Luana Vidal de Negreiros da Silva"'
Publikováno v:
IEEE Sensors Journal. 21:9723-9730
A physically-based model of the Buried Multiple Junction (BMJ) detector has been established with consideration of the device operation in reach-through (RT) conditions. In such a condition, the breakdown voltage of one junction can shift depending o
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2020, 164, pp.107682. ⟨10.1016/j.sse.2019.107682⟩
Solid-State Electronics, Elsevier, 2020, 164, pp.107682. ⟨10.1016/j.sse.2019.107682⟩
We propose an analytical model for the CMOS Buried Multiple Junction (BMJ) detector exhibiting breakdown voltage shift depending on adjacent junction’s bias. The device’s singular behavior has been observed when two adjacent junctions are in reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2f00039569ec671f9900503020ae0ce
https://hal-univ-lyon1.archives-ouvertes.fr/hal-02463250
https://hal-univ-lyon1.archives-ouvertes.fr/hal-02463250
Publikováno v:
2019 IEEE SENSORS.
A physically-based model is proposed to describe the Buried Multiple Junction (BMJ) detector operated in high-voltage conditions. There is a breakdown voltage shift when two adjacent junctions’ depletion regions merge, i.e. in reach-through (RT) co
Publikováno v:
DCIS
For developing application systems of CMOS Buried Quad Junction (BQJ) detector, we have investigated high-voltage (HV) operation of the device by measuring its I-V characteristics in dark conditions. The detector exhibits a singular behavior with bre